The qutrit as a heat diode and circulator

We investigate the heat transport properties of a three-level system coupled to three thermal baths, assuming a model based on superconducting circuit implementations. The system-bath coupling is mediated by resonators which serve as frequency filters for the different qutrit transitions. Taking into account the finite quality factors of the resonators, we find thermal rectification and circulation effects not expected in configurations with perfectly-filtered couplings. Heat leakage in off-resonant transitions can be exploited to make the system work as an ideal diode where heat flows in the same direction between two baths irrespective of the sign of the temperature difference, as well as a perfect heat circulator whose state is phase-reversible.

Silicon carbide of 4H-SiC type Schottky diode current-voltage characteristics in small-sized type metal-polymeric package SOT-89

The forward and reverse current–voltage characteristics of Ti/Al/4H-SiC Schottky diode type DDSH411A91 in modern small-sized (SOT-89) type metal-polymeric package have been obtained. In forward direction (current up to 2 A) on the basis of analysis it is shown that Schottky diode corresponds to the "ideal" diode with ideality factor n=1.12 and effective Schottky barrier height φB =1.2 eV. It is shown that reverse current-voltage characteristics (breakdown voltage 1200 V) can be well approximated by mechanism of field dependence of barrier height lowering by the presence of the intermediate layer in the form of oxide on the 4H-SiC surface.

A Modified General Diode Equation

The general diode equation or the non-ideal diode equation is the foundation of circuit models of active devices for the past several decades. Apart from the effect of p-n junction, this equation also accounts for the series bulk resistance of a diode. Despite a reasonable agreement of the equation with measured IV characteristics, it is shown here that the equation is incompatible with basic theories of circuits and systems. Therefore, a modification in the equation is proposed to remove this incompatibility. This modified equation leads to a compact model of a p-n junction diode that has an excellent agreement with the measured IV characteristics.

A Modified General Diode Equation

The general diode equation or the non-ideal diode equation is the foundation of circuit models of active devices for the past several decades. Apart from the effect of p-n junction, this equation also accounts for the series bulk resistance of a diode. Despite a reasonable agreement of the equation with measured VI characteristics, it is shown here that the equation is incompatible with basic theories of circuits and systems. Therefore, a modification in the equation is proposed to remove this incompatibility. This modified equation has an excellent agreement with the measured VI characteristics.

Investigation of electrical and structural properties of Ag/TiO2/n-InP/Au Schottky diodes with different thickness TiO2 interface

In this study, structural and electrical properties of Ag/TiO2/n-InP/Au Schottky barrier diodes are investigated. Particle size, d- spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO2 layer thickness. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 Å TiO2 interfacial layer is a more ideal diode. The reason for this is argued in main text and conclusion section.

A Modified General Diode Equation

The general diode equation or the non-ideal diode equation is the foundation of circuit models of active devices for the past several decades. Apart from the effect of p-n junction, this equation also accounts for the series bulk resistance of a diode. Despite a reasonable agreement of the equation with measured VI characteristics, it is shown here that the equation is incompatible with basic theories of circuits and systems. Therefore, a modification in the equation is proposed to remove this incompatibility. This modified equation has an excellent agreement with the measured VI characteristics.

A Modified General Diode Equation

The general diode equation or the non-ideal diode equation is the foundation of circuit models of active devices for the past several decades. Apart from the effect of p-n junction, this equation also accounts for the series bulk resistance of a diode. Despite a reasonable agreement of the equation with measured VI characteristics, it is shown here that the equation is incompatible with basic theories of circuits and systems. Therefore, a modification in the equation is proposed to remove this incompatibility. This modified equation has an excellent agreement with the measured VI characteristics.

SiC MPS Devices: One Step Closer to the Ideal Diode

We report on the development of a new generation of SiC Schottky rectifier devices employing a Molybdenum based barrier metal system and a new stripe cell design for field shielding and optimized area utilization. The Schottky barrier height is reduced and thus the conduction losses are decreased significantly. The balance between forward conduction and reverse leakage losses as well as the homogeneity and stability of the new barrier system are investigated carefully.