Trap Charge Density at Interfaces of MOCVD Pt(Ir)/PZT/Ir(Ti/SiO2/Si) Structures

2005 ◽  
Vol 902 ◽  
Author(s):  
Lyuba A. Delimova ◽  
I. V. Grekhov ◽  
D. V. Mashovets ◽  
Sangmin Shin ◽  
June-Mo Koo ◽  
...  
Keyword(s):  
Charge Density ◽  
Metal Structure ◽  
Ferroelectric Film ◽  
Schottky Barriers ◽  
Trap Density ◽  
Transient Current ◽  
Interface Traps ◽  
Trap Charge ◽  
External Bias ◽  
Bias Pulse

AbstractA method providing estimation of the trap density at metal/ferroelectric interfaces of a depleted ferroelectric film located between back-to-back Schottky barriers has been developed. The method is based on the recharge of interface traps induced by external bias pulse applied to the metal/ferroelectric/metal structure. It is shown that the transient current under bias pulse can be controlled by the traps recharge on the reverse-biased interface. Using the method, the trap charge density on interfaces of MOCVD Pt/PZT/Ir(Ti/SiO2/Si) and Ir/PZT/Ir(Ti/SiO2/Si) capacitors were found from transient current measurements.

Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ferroelectric∕metal structure

2005 ◽  
Vol 87 (19) ◽  
pp. 192101 ◽  
Author(s):  
L. A. Delimova ◽  
I. V. Grekhov ◽  
D. V. Mashovets ◽  
S. E. Tyaginov ◽  
Sangmin Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Density ◽  
Metal Structure ◽  
Current Measurement ◽  
Transient Current ◽  
Trap Charge

Thin Ferroelectric Film between Double Schottky Barriers

2004 ◽  
Vol 830 ◽  
Author(s):  
Lyuba A. Delimova ◽  
Igor V. Grekhov ◽  
Dmitri V. Mashovets ◽  
Sangmin Shin ◽  
June-Mo Koo ◽  
...  
Keyword(s):  
Film Thickness ◽  
Poisson Equation ◽  
Electric Fields ◽  
Field Potential ◽  
Ferroelectric Film ◽  
Schottky Barriers ◽  
Flat Band ◽  
External Bias ◽  
The Poisson Equation ◽  
Type Semiconductor

ABSTRACTThin-film uniform metal-ferroelectric-metal (M/F/M) structure between back-to-back Schottky barriers (SBs) is considered. The ferroelectric is assumed to be a p-type semiconductor, and the film thickness is far less than the depletion layer induced by the S.B. Numerical integration of the Poisson equation is used to analyze the influence of double Shottky barriers on the distributions of the electric field, potential, and polarization across the film thickness as functions of external bias and the film electrical history. The range of structure parameters is determined, where the Poisson equation for M/F/M structure can be solved analytically providing an obvious and easy-to-interpret representation of the M/F/M behavior. Electric fields induced by back-to-back SBs under zero external bias compensate each other to a great extent. As a result, the potential across the ferroelectric film remains virtually unchanged providing the flat-band condition in the energy diagram of zero-biased M/F/M structure; in fact, the external bias applied to M/F/M structure exerts influence only on the reverse-biased barrier.

An Approach to Model Temperature Effects of Interface Traps in 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 497-500 ◽  
Author(s):  
R. Ramakrishna Rao ◽  
S. Balaji ◽  
Kevin Matocha ◽  
Vinayak Tilak
Keyword(s):  
Charge Density ◽  
Threshold Voltage ◽  
Temperature Effects ◽  
Inversion Layer ◽  
Interface Trap Density ◽  
Interface Traps ◽  
Temperature Dependent ◽  
Trap Charge ◽  
Band Gap Narrowing ◽  
Model Temperature

In 4H silicon carbide MOSFETs, threshold voltage varies with temperature. It is believed that this is caused by trapping of inversion electrons at high density of interface-traps (Dit) present at the SiC/SiO2 interface in 4H-SiC MOSFETs. In this work, we present an approach to model the interface trap density as a function of temperature that includes the effect of band gap narrowing. Using the temperature dependent trap charge density, we can estimate the variation of mobile inversion layer charge density, which in turn, explains the threshold voltage behavior with temperature in 4H-SiC MOSFETs.

Minimizing Trap Charge Density towards an Ideal Diode in Graphene–Silicon Schottky Solar Cell

2018 ◽  
Vol 11 (1) ◽  
pp. 880-888 ◽  
Author(s):  
Subash Adhikari ◽  
Chandan Biswas ◽  
Manh-Ha Doan ◽  
Sung-Tae Kim ◽  
Chandramouli Kulshreshtha ◽  
...  
Keyword(s):  
Solar Cell ◽  
Charge Density ◽  
Trap Charge ◽  
Ideal Diode

scholarly journals Особенности МДП-структур с фторидом самария на кремниевых и германиевых подложках

2019 ◽  
Vol 53 (2) ◽  
pp. 241
Author(s):  
М.Б. Шалимова ◽  
Н.В. Сачук
Keyword(s):  
Electric Fields ◽  
Transmission Mechanism ◽  
Interface Traps ◽  
Power Dependence ◽  
Trap Charge ◽  
Insulator Film ◽  
Current Transmission ◽  
Capacitance Voltage ◽  
Silicon And Germanium ◽  
P Type

AbstractThe electrophysical characteristics of silicon and germanium MIS structures with an SmF_3 insulator film, as well as their degradation due to the effect of electric fields, although similar, have a number of specific features. The current-transmission mechanism in all studied structures is described by the power dependence. Interface traps form the charge of electrically active traps, which varies during capacitance–voltage measurements, and the charge of inactive traps, which remains invariable. This charge is negative on the n -Ge surface, and the corresponding charge on the n -type and p -type silicon surface is positive. The trap charge density in the bulk of samarium fluoride lies in the range from –0.2 × 10^–8 to 0.6 × 10^–8 C/cm^2 and is negligibly small when compared with the charge of interface traps in most cases.

Integration between LiNbO3 Ferroelectric Film and AlGaN/GaN System

2011 ◽  
Vol 687 ◽  
pp. 303-308 ◽  
Author(s):  
L. Z. Hao ◽  
Jun Zhu ◽  
Y. R. Li
Keyword(s):  
Electron Concentration ◽  
Electron Mobility ◽  
Ferroelectric Film ◽  
Ferroelectric Polarization ◽  
Uniform Domain ◽  
Voltage Measurement ◽  
Ferroelectric Films ◽  
External Bias ◽  
Capacitance Voltage ◽  
Gan Heterostructure

LiNbO3 film (LNO)/AlGaN/GaN heterostructure was fabricated epitaxially. The preferable C+ oriented domains in LNO film lead to the formation of the spontaneous ferroelectric polarization. As a result, the sheet electron concentration of the 2DEG (ns) decreased from 1.13×1013 cm-2 to 1.04×1013 cm-2 when a LNO film deposited on the AlGaN/GaN. The ns decreased nonlinearly with decreasing the temperature. Additionally, the electron mobility for the LNO/AlGaN/GaN heterostructure decreased greatly compared with that for AlGaN/GaN heterostructure, which was caused by the non-uniform domain structure in the LNO film. By external bias switching the ferroelectric polarization, the relative enhancement of the 2DEG, about 7.68×1011/cm2, could be accessible from capacitance-voltage measurement. These results indicated that ferroelectric films combined with AlGaN/GaN would hold promise for next-generation GaN-based memory devices.

scholarly journals AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 416 ◽  
Author(s):  
Kuiwei Geng ◽  
Ditao Chen ◽  
Quanbin Zhou ◽  
Hong Wang
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Deep Trap ◽  
Trap Density ◽  
Interface Traps ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Metal Insulator ◽  
Current Collapse ◽  
Gate Leakage Current Density

Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and Ion/Ioff ratio. The SiNx MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current density. The SiO2 MIS-HEMT possessed the lowest gate leakage current density but suffered from the early breakdown of the metal–insulator–semiconductor (MIS) diode. As for interface traps, the SiNx MIS-HEMT has the largest shallow trap density and the lowest deep trap density. The SiO2 MIS-HEMT has the largest deep trap density. The factors causing current collapse were confirmed by Photoluminescence (PL) spectra. Based on the direct current (DC) characteristics, SiNx and SiON both have advantages and disadvantages.

The Electrical Characteristics of a Pd/AlN/Si Thin Film Hydrogen Gas Sensor

2003 ◽  
Vol 801 ◽  
Author(s):  
Erik F. McCullen ◽  
Haripriya E. Prakasam ◽  
Wenjun Mo ◽  
Jagdish Thakur ◽  
Ratna Naik ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface States ◽  
Hydrogen Gas ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Interface Traps ◽  
Electrical Characteristics ◽  
Film Sensor ◽  
Si Thin Film

ABSTRACTWe have extended our previous investigation of the electrical characteristics of a Pd/AlN/Si thin film sensor for varying thicknesses of AlN, from 300–2000Å. The capacitance vs. voltage, C(V), and conductance vs. voltage, G(V), measurements were utilized to investigate the presence of surface states within the Si gap at the AlN/Si interface. Our previous experiments on 500Å AlN did show the presence of interface traps, with an estimated surface density between 8×1014 and 1.5×1015 m−2eV−1 [1]. In our present work we've examined the effect of AlN thickness on the density of these interface traps. The density is dependent on AlN thickness. The thinner devices, 300Å, showed an interface trap density of 20–30×1015 m−2eV−1. The interface trap density decreased with increasing thickness up to 500Å, where the density remained relatively constant at about 1–5×1015 m−2eV−1 for thicknesses up to 2000Å. We have also shown that the interface trap density is independent of annealing.

Investigation of the Trapping Mechanism for Transient Current-Voltage Behavior In CIGSS-Based Solar Cells

2001 ◽  
Vol 668 ◽  
Author(s):  
Pamela K. Johnson ◽  
James R. Sites ◽  
Dale E. Tarrant
Keyword(s):  
Elevated Temperatures ◽  
Light Exposure ◽  
Transient Behavior ◽  
Open Circuit ◽  
Trap Density ◽  
Transient Current ◽  
Photon Absorption ◽  
Cyclic Behavior ◽  
Zero Bias ◽  
Current Voltage

ABSTRACTSome thin-film CIS photovoltaic devices exhibit reversible transient behavior in their electrical properties induced by modestly elevated (70 - 100 °C) temperatures. This paper evaluates changes due to light exposure, thermal exposure, and applied bias in cells fabricated by Siemens Solar Industries (SSI). When a constant bias was maintained across cells subjected to elevated temperatures in the dark, and subsequent moderate- temperature light exposure, there was little reversible transient behavior. When the bias was cycled between zero and open-circuit voltage (VOC), independent of illumination, the fill factor (FF) decreased for zero bias and increased at VOC. Hence, it is the bias rather than photon absorption that drives the transient current-voltage behavior in these cells. Investigations of the relationship between trapping mechanisms and transient behavior using the frequency and temperature dependence of capacitance showed clear cyclic behavior in the trap-response frequency. Trap density profiles were found to be relatively independent of measurement temperature, and the total trap density varied only slightly with the bias cycle.

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