Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

Oxide Semiconductor ◽

Interface Trap ◽

Charge Generation ◽

Oxide Charge ◽

Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxide-semiconductor field-effect transistors with nitrogen and silicon incorporated HfO2 gate dielectrics

Applied Physics Letters ◽

10.1063/1.3541879 ◽

2011 ◽

Vol 98 (6) ◽

pp. 063504 ◽

Cited By ~ 8

Author(s):

Changhwan Choi ◽

Jack C. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Oxide Semiconductor ◽

Interface Trap ◽

Negative Bias ◽

Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2183409 ◽

2006 ◽

Vol 99 (6) ◽

pp. 064510 ◽

Cited By ~ 12

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Oxide Semiconductor ◽

Negative Bias ◽

Temperature Instability ◽

Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs)

Chinese Physics ◽

10.1088/1009-1963/16/7/052 ◽

2007 ◽

Vol 16 (7) ◽

pp. 2111-2115 ◽

Cited By ~ 3

Author(s):

Liu Hong-Xia ◽

Hao Yue

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Deep Submicron ◽

Oxide Semiconductor ◽

Negative Bias ◽

Hot Carriers ◽

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

10.1143/jjap.49.04dc08 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC08

Author(s):

Liangliang Zhang ◽

Changze Liu ◽

Runsheng Wang ◽

Ru Huang ◽

Tao Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Stress Condition ◽

Oxide Semiconductor ◽

Negative Bias ◽

Bias Temperature Instability ◽

P Type

Device Characteristics and Aggravated Negative Bias Temperature Instability inp-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain

10.1143/jjap.45.3064 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3064-3069 ◽

Cited By ~ 8

Author(s):

Chia-Yu Lu ◽

Horng-Chih Lin ◽

Yi-Feng Chang ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Compressive Strain ◽

Oxide Semiconductor ◽

Negative Bias ◽

Temperature Instability ◽

The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/19/9/097306 ◽

2010 ◽

Vol 19 (9) ◽

pp. 097306 ◽

Cited By ~ 6

Author(s):

Cao Yan-Rong ◽

Ma Xiao-Hua ◽

Hao Yue ◽

Tian Wen-Chao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Negative Bias ◽

Temperature Instability ◽

New Simulation Method to Characterize the Recoverable Component of Dynamic Negative-Bias Temperature Instability in p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Journal of Electronic Materials ◽

10.1007/s11664-014-2978-8 ◽

2014 ◽

Vol 43 (4) ◽

pp. 1207-1213 ◽

Cited By ~ 3

Author(s):

H. Hussin ◽

N. Soin ◽

M.F. Bukhori ◽

Y. Abdul Wahab ◽

S. Shahabuddin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Simulation Method ◽

Oxide Semiconductor ◽

Negative Bias ◽

Temperature Instability ◽

Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.46.2011 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2011-2014 ◽

Cited By ~ 2

Author(s):

Jone F. Chen ◽

Dao-Hong Yang ◽

Chih-Yung Lin ◽

Shien-Yang Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Supply Voltage ◽

Oxide Semiconductor ◽

Negative Bias ◽

Temperature Instability ◽

Investigation of Positive and Negative Bias Temperature Instability of High-κ Dielectric Metal Gate Metal–Oxide–Semiconductor-Field-Effect-Transistors by Random Telegraph Signal

10.7567/jjap.52.036503 ◽

2013 ◽

Vol 52 (3R) ◽

pp. 036503 ◽

Cited By ~ 1

Author(s):

Da-Cheng Huang ◽

Jeng Gong ◽

Chih-Fang Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Negative Bias ◽

Metal Gate ◽

Temperature Instability ◽

Carrier Mobility Characteristics and Negative Bias Temperature Instability Reliability in Strained-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Electrochemical and Solid-State Letters ◽

10.1149/1.2357984 ◽

2006 ◽

Vol 9 (12) ◽

pp. G351 ◽

Cited By ~ 2

Author(s):

Tung-Ming Pan

Keyword(s):

Field Effect ◽

Carrier Mobility ◽

Oxide Semiconductor ◽

Negative Bias ◽

Strained Si ◽

Bias Temperature Instability ◽

P Type