Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

Ternary rare earth oxides are expected to be more promising high-k dielectric materials than conventional binary rare earth oxides due to higher band gap, higher permittivity and good interfacial stability. In the present study, the band alignment and atom thermal diffusion of LaYbO3 , a new ternary rare earth oxide, are studied by X-ray photoelectron spectrum (XPS) and angle-resolved XPS, respectively. The band gap value for LaYbO3 crystalline film rises to 6.7 eV compared with 6.2 eV for amorphous film. Valence (ΔEv) and conduction band (ΔEc) offset are ΔEv = 3.5 eV, ΔEc = 1.6 eV for the amorphous film and ΔEv = 3.3 eV, ΔEc = 2.3 eV for the crystalline film. From elemental depth profile through high-k layer and silicon substrate, it is shown that La atom tends to diffuse into silicon substrate and piles up at oxide/silicon interface at high annealing temperature ~1000°C.

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Electron energy band alignment at the NiO/SiO2 interface

Applied Physics Letters ◽

10.1063/1.3413960 ◽

2010 ◽

Vol 96 (17) ◽

pp. 172105 ◽

Cited By ~ 4

Author(s):

V. V. Afanas’ev ◽

M. Badylevich ◽

M. Houssa ◽

A. Stesmans ◽

Gagan Aggrawal ◽

...

Keyword(s):

Electron Energy ◽

Energy Band ◽

Band Alignment

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Energy Band Alignment of ZnSx Se1-x Films on Si for Photovoltaic Carrier-Selective Contacts

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

10.1109/pvsc.2018.8548022 ◽

2018 ◽

Author(s):

Rebecca D. Glaudell ◽

Harry A. Atwater

Keyword(s):

Energy Band ◽

Band Alignment

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Photonic crystal membrane with single crystalline rare-earth oxide using selective area growth by MBE

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528793 ◽

2016 ◽

Author(s):

Takehiko Tawara ◽

Hiroo Omi ◽

Thomas McManus ◽

Aleix Llenas ◽

Eiichi Kuramochi ◽

...

Keyword(s):

Rare Earth ◽

Photonic Crystal ◽

Rare Earth Oxide ◽

Selective Area Growth ◽

Single Crystalline ◽

Selective Area ◽

Area Growth ◽

Photonic Crystal Membrane

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Effect of rare earth oxide CeO2 on the anodic bonding performance of PEG-based MEMS encapsulation materials

Advances in Mechanical Engineering ◽

10.1177/16878140211007712 ◽

2021 ◽

Vol 13 (3) ◽

pp. 168781402110077

Author(s):

Chao Du ◽

Cuirong Liu ◽

Xu Yin ◽

Haocheng Zhao

Keyword(s):

Tensile Strength ◽

Rare Earth ◽

Rare Earth Oxide ◽

Solid Polymer Electrolytes ◽

Anodic Bonding ◽

Solid Polymer ◽

Bonding Layer ◽

Scanning Calorimetry ◽

Ion Migration ◽

Bonding Performance

Herein, we synthesized a new polyethylene glycol (PEG)-based solid polymer electrolyte containing a rare earth oxide, CeO2, using mechanical metallurgy to prepare an encapsulation bonding material for MEMS. The effects of CeO2 content (0–15 wt.%) on the anodic bonding properties of the composites were investigated. Samples were analyzed and characterized by alternating current impedance spectroscopy, X-ray diffraction, scanning electron microscopy, differential scanning calorimetry, tensile strength tests, and anodic bonding experiments. CeO2 reduced the crystallinity of the material, promoted ion migration, increased the conductivity, increased the peak current of the bonding process, and increased the tensile strength. The maximum bonding efficiency and optimal bonding layer were obtained at 8 wt% CeO2. This study expands the applications of solid polymer electrolytes as encapsulation bonding materials.

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