Photonic crystal membrane with single crystalline rare-earth oxide using selective area growth by MBE

2016 ◽  
Author(s):  
Takehiko Tawara ◽  
Hiroo Omi ◽  
Thomas McManus ◽  
Aleix Llenas ◽  
Eiichi Kuramochi ◽  
...  
Keyword(s):  
Rare Earth ◽  
Photonic Crystal ◽  
Rare Earth Oxide ◽  
Selective Area Growth ◽  
Single Crystalline ◽  
Selective Area ◽  
Area Growth ◽  
Photonic Crystal Membrane

Using the Evolutionary Selection Principle in Selective Area Growth to Achieve Single-Crystalline GaN on SiO2

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450003
Author(s):  
Benjamin Leung ◽  
Jie Song ◽  
Yu Zhang ◽  
Miao-Chan Tsai ◽  
Ge Yuan ◽  
...  
Keyword(s):  
Optoelectronic Devices ◽  
Selective Area Growth ◽  
New Materials ◽  
Single Crystalline ◽  
Selection Principle ◽  
Evolutionary Selection ◽  
Selective Area ◽  
Area Growth ◽  
Amorphous Substrates ◽  
Device Applications

Conventional epitaxial techniques requires single crystalline substrates to form semiconductor material of desired material quality for device applications. The use of amorphous substrates, in many applications, provides an opportunity to consider new materials and designs, which can fundamentally alter the performance, functionality and/or cost limitations of many optoelectronic devices. Here, a growth process is described to achieve single crystalline GaN material on amorphous SiO2. The evolutionary selection principle in crystal growth is the basis of this technique, and the mechanism is described and analyzed in detail. It is expected that this process can be extended to other semiconductor and substrate combinations, allowing heterogenous integration with functional substrates to produce new classes of semiconductor devices.

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

scholarly journals Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075013
Author(s):  
F. Meier ◽  
M. Protte ◽  
E. Baron ◽  
M. Feneberg ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective-area growth of III-V nanowires and their applications

2011 ◽  
Vol 26 (17) ◽  
pp. 2127-2141 ◽  
Author(s):  
Katsuhiro Tomioka ◽  
Keitaro Ikejiri ◽  
Tomotaka Tanaka ◽  
Junichi Motohisa ◽  
Shinjiroh Hara ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Image Position

Abstract

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