Large remnant polarization and excellent fatigue property of vanadium-doped SrBi4Ti4O15 thin films

AbstractHighly (100)-textured thin film of metallic LaNiO3 (LNO) was grown on the Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at ˜300°C, which was used as a bottom electrode to prepare highly (100)-textured ferroelectric films. Examples on the deposition of PbTiO3, (Pbl−xLax)TiO3, Pb(Zr0.53Ti0.47)O3, Pb[(Mg1/3Nb2/3)1−xTix]O3, and (Ba1−xSrx)TiO3 thin films by rf magnetron sputtering or sol-gel method are shown. A reduction of temperature for perovskite phase formation can be achieved, especially for those difficult to crystallize. The surface roughness of the ferroelectric films is also improved as compared to that of films deposited on conventional Pt electrode. Although the electrical properties of the ferroelectric films are affected by the out-diffusion of LNO when a higher temperature was used in the preparation of the films, under an appropriate processing condition, the highly (100)-textured films can have satisfactory electrical characteristics for application. Moreover, the polarization-fatigue property can be also improved by the use of LNO electrode.

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Ferroelectric Property of Ion Beam Enhanced Deposited Lithium Tantalate Thin Film

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.335-336.1418 ◽

2011 ◽

Vol 335-336 ◽

pp. 1418-1423

Author(s):

De Yin Zhang ◽

Wei Qian ◽

Kun Li ◽

Jian Sheng Xie

Keyword(s):

Thin Film ◽

Thin Films ◽

Surface Morphology ◽

Hysteresis Loop ◽

Ferroelectric Property ◽

Ion Beam ◽

Ferroelectric Properties ◽

Fatigue Property ◽

Lithium Tantalate ◽

Electric Filed

The Ion Beam Enhanced Deposited (IBED) lithium tantalate (LiTaO3) thin film samples with Al/LiTaO3/Pt electrode structure were prepared on the Pt/Ti/SiO2/Si(100) and SiO2/Si(100) substrate respectively. The crystallization, surface morphology, ferroelectric property, and fatigue property of the prepared samples with the different annealed processes were investigated. The XRD measured results show that the prepared samples have the polycrystal structure of LiTaO3 with the preferred orientation of <012> and <104> located at the 2θ of 23.60 and 32.70 respectively. The SEM morphology analysis reveals the prepared film annealed at 550°C is uniform, smooth and crack-free on the surface and cross section. The ferroelectric property measured results show that the remanent polarization Pr of the samples annealed at different temperature almost increase with the electric field intensity stronger. The leakage current makes the hysteresis loop of the samples subjected to a strong measured electric filed difficult to appear the same saturation hysteresis loop as the single-crystal LiTaO3. The prepared samples annealed at 550°C have a Pr value of 11.5μC/cm2 when subjected to the electrical field of 400kV/cm. The breakdown voltage of the 587nm thick thin film sample is high as to 680 kV/cm. The fatigue property measured results show only 15.17% Pr drop of the prepared films annealed at 550°C appear after 5×1010 cycles polarized by the 10MHz sinusoidal signal with the peak-to-peak amplitude of 10 Volt. The ferroelectric properties of the prepared films meet the practical application requirements of charge response measurement of the LiTaO3 infrared detector owe to the Pr of the prepared films annealed at different temperature large beyond 10μC/cm2 when the prepared films subjected to a strong electric filed larger than 400 kV/cm. The experimental results also show that the surface morphology, the ferroelectric and fatigue properties of the IBED LiTaO3 thin films are significant better than those of the Sol-Gel derived LiTaO3 thin films.

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Influence of Bi3.15Nd0.85Ti3O12 Buffer Layer on Structure and Electrical Properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 Thin Films

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.703.51 ◽

2014 ◽

Vol 703 ◽

pp. 51-55

Author(s):

Jia Zeng ◽

Ming Hua Tang ◽

Zhen Hua Tang ◽

Yong Guang Xiao ◽

Long Peng ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Buffer Layer ◽

Current Density ◽

Coercive Field ◽

Remnant Polarization ◽

Sol Gel ◽

Hysteresis Loops ◽

Si Substrates ◽

Sol Gel Process

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

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2841 Evaluation of Fatigue Property of Silicon Thin Films

The proceedings of the JSME annual meeting ◽

10.1299/jsmemecjo.2007.1.0_737 ◽

2007 ◽

Vol 2007.1 (0) ◽

pp. 737-738

Author(s):

Taku KAWAI ◽

Shingo AMAKI ◽

Shoji KAMIYA ◽

Oliver PAUL ◽

Joao GASPAR

Keyword(s):

Thin Films ◽

Fatigue Property ◽

Silicon Thin Films

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Preparation of Bi2SiO5-SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering

MRS Proceedings ◽

10.1557/proc-748-u12.8 ◽

2002 ◽

Vol 748 ◽

Author(s):

Shin Kikuchi ◽

Hiroshi Ishiwara

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Leakage Current ◽

Leakage Current Density ◽

Current Density ◽

Remnant Polarization ◽

Rf Magnetron Sputtering ◽

Ferroelectric Thin Films ◽

Ferroelectric Films ◽

Typical Composition

ABSTRACTSi-added SrBi2Ta2O9 (SBT) ferroelectric films were prepared by RF magnetron sputtering on a Pt/Ti/SiO2/Si (100) structure. The films were deposited at temperatures below 100°C for preventing Bi evaporation and crystallized at 800°C in air. A typical composition was Sr0.79Bi2.37Ta2.00Si0.2Ox. The remnant polarization value(2Pr) of the Si-added SBT film was 16C/cm2 and leakage current density was 5×10-8A/cm2. The current density was significantly decreased by adding Si atoms.

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Improvement of the remnant polarization of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 thin films in a multilayer composite

Thin Solid Films ◽

10.1016/j.tsf.2011.05.003 ◽

2011 ◽

Vol 519 (19) ◽

pp. 6467-6471 ◽

Cited By ~ 5

Author(s):

H. El Hosiny Ali ◽

R. Jiménez ◽

J. Ricote ◽

M. Algueró ◽

M.L. Calzada

Keyword(s):

Thin Films ◽

Remnant Polarization ◽

Multilayer Composite

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Electrical Properties Optimization of Ba0.9Sr0.1TiO3 Thin Films Deposited by Sol-Gel

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.277.1 ◽

2011 ◽

Vol 277 ◽

pp. 1-10 ◽

Cited By ~ 5

Author(s):

D. Fasquelle ◽

M. Mascot ◽

J.C. Carru

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Electrical Properties ◽

Annealing Time ◽

Remnant Polarization ◽

Sol Gel ◽

Si Substrates ◽

Annealing Temperatures ◽

Annealing Conditions ◽

Average Size

This paper reports a study of Ba0.9Sr0.1TiO3films deposited on Pt/Ti/SiO2/Si substrates. The annealing temperatures were 750°C, 850°C and 950°C. An increase of the average size of grains was observed, from 60 nm at 750°C to 110 nm at 950°C, as well as an increase of the dielectric constant, remnant polarization and tunability. When the annealing time was decreased from 1 hour to 15 min, the dielectric constant and remnant polarization values have been increased. The optimized annealing conditions (950°C for 15 min) give the following results: εr= 780 and tgδ = 0.01 at 100 kHz, Pr = 13 µC/cm², Ec = 63 kV/cm and a tunability of 55%.

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Microstructure and Properties of A-Site Doping Bi4-xYxTi3O12 Ferrroelectric Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.815.171 ◽

2015 ◽

Vol 815 ◽

pp. 171-175

Author(s):

Hong Cheng Liu ◽

Wei Jun Zhang ◽

Xiao Chen Zhang ◽

Qian Yu ◽

Jue Wang

Keyword(s):

Thin Films ◽

Coercive Field ◽

Remnant Polarization ◽

Bismuth Titanate ◽

Ferroelectric Properties ◽

Sol Gel ◽

Ferroelectric Thin Films ◽

Phase Development ◽

Sol Gel Process ◽

A Site

s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms ofY3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+substitution for Bi3+on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+substitution for Bi3+on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films werex:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted contentxwas equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Prvalue was equal to 16.02μC/cm2and the coercive fieldEcvalue was 88 kV/cm.

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Remnant Polarization in Thin Films from a Columnar Liquid Crystal

Journal of the American Chemical Society ◽

10.1021/ja101734g ◽

2010 ◽

Vol 132 (20) ◽

pp. 6892-6893 ◽

Cited By ~ 77

Author(s):

Carel F. C. Fitié ◽

W. S. Christian Roelofs ◽

Martijn Kemerink ◽

Rint P. Sijbesma

Keyword(s):

Thin Films ◽

Liquid Crystal ◽

Remnant Polarization

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