Improvement of the remnant polarization of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 thin films in a multilayer composite

2011 ◽  
Vol 519 (19) ◽  
pp. 6467-6471 ◽  
Author(s):  
H. El Hosiny Ali ◽  
R. Jiménez ◽  
J. Ricote ◽  
M. Algueró ◽  
M.L. Calzada
Keyword(s):  
Thin Films ◽  
Remnant Polarization ◽  
Multilayer Composite

Influence of Bi3.15Nd0.85Ti3O12 Buffer Layer on Structure and Electrical Properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 Thin Films

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Current Density ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Sol Gel Process

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

Preparation of Bi2SiO5-SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering

2002 ◽  
Vol 748 ◽  
Author(s):  
Shin Kikuchi ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Remnant Polarization ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Ferroelectric Films ◽  
Typical Composition

ABSTRACTSi-added SrBi2Ta2O9 (SBT) ferroelectric films were prepared by RF magnetron sputtering on a Pt/Ti/SiO2/Si (100) structure. The films were deposited at temperatures below 100°C for preventing Bi evaporation and crystallized at 800°C in air. A typical composition was Sr0.79Bi2.37Ta2.00Si0.2Ox. The remnant polarization value(2Pr) of the Si-added SBT film was 16C/cm2 and leakage current density was 5×10-8A/cm2. The current density was significantly decreased by adding Si atoms.

Electrical Properties Optimization of Ba0.9Sr0.1TiO3 Thin Films Deposited by Sol-Gel

2011 ◽  
Vol 277 ◽  
pp. 1-10 ◽  
Author(s):  
D. Fasquelle ◽  
M. Mascot ◽  
J.C. Carru
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Annealing Time ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Annealing Conditions ◽  
Average Size

This paper reports a study of Ba0.9Sr0.1TiO3films deposited on Pt/Ti/SiO2/Si substrates. The annealing temperatures were 750°C, 850°C and 950°C. An increase of the average size of grains was observed, from 60 nm at 750°C to 110 nm at 950°C, as well as an increase of the dielectric constant, remnant polarization and tunability. When the annealing time was decreased from 1 hour to 15 min, the dielectric constant and remnant polarization values have been increased. The optimized annealing conditions (950°C for 15 min) give the following results: εr= 780 and tgδ = 0.01 at 100 kHz, Pr = 13 µC/cm², Ec = 63 kV/cm and a tunability of 55%.

Microstructure and Properties of A-Site Doping Bi4-xYxTi3O12 Ferrroelectric Thin Films

2015 ◽  
Vol 815 ◽  
pp. 171-175
Author(s):  
Hong Cheng Liu ◽  
Wei Jun Zhang ◽  
Xiao Chen Zhang ◽  
Qian Yu ◽  
Jue Wang
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Phase Development ◽  
Sol Gel Process ◽  
A Site

s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms ofY3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+substitution for Bi3+on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+substitution for Bi3+on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films werex:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted contentxwas equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Prvalue was equal to 16.02μC/cm2and the coercive fieldEcvalue was 88 kV/cm.

Remnant Polarization in Thin Films from a Columnar Liquid Crystal

2010 ◽  
Vol 132 (20) ◽  
pp. 6892-6893 ◽  
Author(s):  
Carel F. C. Fitié ◽  
W. S. Christian Roelofs ◽  
Martijn Kemerink ◽  
Rint P. Sijbesma
Keyword(s):  
Thin Films ◽  
Liquid Crystal ◽  
Remnant Polarization

Fabrication of 3-Dimensional PbZr1−x TixO3 Nanoscale Thin Film Capacitors for High Density Ferroelectric Random Access Memory Devices

2006 ◽  
Vol 6 (11) ◽  
pp. 3333-3337 ◽  
Author(s):  
Sangmin Shin ◽  
June-Mo Koo ◽  
Sukpil Kim ◽  
Bum-Seok Seo ◽  
Jung-Hyun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Remnant Polarization ◽  
Random Access ◽  
Switching Behavior ◽  
Pzt Thin Films ◽  
3 Dimensional ◽  
Thin Film Capacitors ◽  
Pattern Size ◽  
20 Nm

PbZrx Ti1−xO3 (PZT) thin films were deposited on 3-dimensional (3D) nano-scale trench structures for use in giga-bit density ferroelectric random access memories. PZT thin films were deposited by liquid delivery metalorganic chemical vapor deposition using Pb(thd)2, Zr(MMP)4, and Ti(MMP)4 precursors dissolved in ethyl cyclohexane. Iridium thin films were deposited by atomic layer deposition, and they exhibited excellent properties for capacitor electrodes even at a thickness of 20 nm. The trench capacitor was composed of three layers, viz. Ir/PZT/Ir (20/60/20 nm), and had a diameter of 250 nm and a height of 400 nm. Almost 100% step coverage was obtained at a deposition temperature of 530 °C. The PZT thin film capacitors with a thickness of 60 nm on a planar structure exhibited a remnant polarization (Pr of 28 μC/cm2, but the Pr value of the 3D PZT capacitors decreased slightly with decreasing 3D trench pattern size. The transmission electron microscope analysis indicated that the PZT thin films had compositional uniformity in the 3D trench region. Both columnar and granular grains were formed on the sidewalls of the trench capacitors, and their relative proportion exhibited strong size dependence. The trench capacitors with more columnar PZT grains showed good switching behavior under an external bias of 2.1 V and had a remnant polarization of 19 ∼ 24 μC/cm2.

The Electrical Properties of PLZT Thin Films on ITO Coated Glass with Various Post-Annealing Temperature

2008 ◽  
Vol 569 ◽  
pp. 169-172
Author(s):  
Won Hyo Cha ◽  
Ji Eon Yoon ◽  
Dong Hyun Hwang ◽  
Chul Su Lee ◽  
In Seok Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Remnant Polarization ◽  
Annealing Temperature ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Fatigue Properties ◽  
Wave Form ◽  
Coated Glass ◽  
Plzt Thin Films

Lanthanum modified lead zirconate titanate (Pb1.1La0.08Zr0.65Ti0.35O3) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrate by r.f magnetron sputtering method. The thin films were deposited at 500°C and annealed at various temperature (550~600°C) by rapid thermal processing. The structure and morphology of the films were characterized with X-ray diffraction and atomic force microscopy. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature increased, the remnant polarization value increased from 10.58 DC/cm2 to 31.35 DC/cm2, coercive field was reduced from 79.906 kV/cm to 60.937 kV/cm. For the switching polarization endurance analysis, the remnant polarization of PLZT thin films annealed at 700°C was decreased 15% after 109 switching cycles using 1MHz square wave form at 5V.

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