Two-dimensional analysis for emitter ledge thickness of InGaP∕GaAs heterojunction bipolar transistors

Applied Physics Letters ◽

10.1063/1.2432224 ◽

2007 ◽

Vol 90 (4) ◽

pp. 043510 ◽

Author(s):

Shiou-Ying Cheng ◽

Kuei-Yi Chu ◽

Li-Yang Chen ◽

Lu-Ann Chen ◽

Chun-You Chen

Keyword(s):

Dimensional Analysis ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Two Dimensional

Download Full-text

Two-dimensional analysis of surface recombination at the extrinsic base surface under various conditions in heterojunction bipolar transistors

Solid-State Electronics ◽

10.1016/0038-1101(94)00144-5 ◽

1995 ◽

Vol 38 (3) ◽

pp. 633-639 ◽

Author(s):

Chang-Woo Kim ◽

Norio Goto ◽

Kazuhiko Honjo

Keyword(s):

Dimensional Analysis ◽

Heterojunction Bipolar Transistors ◽

Surface Recombination ◽

Bipolar Transistors ◽

Two Dimensional ◽

Base Surface ◽

Download Full-text

Computer-aided two-dimensional analysis of bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1973.17727 ◽

1973 ◽

Vol 20 (8) ◽

pp. 669-679 ◽

Author(s):

J.W. Slotboom

Keyword(s):

Dimensional Analysis ◽

Bipolar Transistors ◽

Two Dimensional ◽

Download Full-text

Gallium-nitride-based Heterojunction Bipolar Transistors with Two-dimensional Hole Gas Fabricated by Epitaxial Lift-off Process

10.7567/ssdm.2019.k-4-03 ◽

2019 ◽

Author(s):

T. Kumabe ◽

M. Ogura ◽

A. Tanaka ◽

Y. Ando ◽

H. Watanabe ◽

...

Keyword(s):

Gallium Nitride ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Two Dimensional ◽

Download Full-text

Two-dimensional numerical analysis of heterojunction bipolar transistors including the effects of graded layer, setback layer and self-heating

Solid-State Electronics ◽

10.1016/0038-1101(95)00142-5 ◽

1996 ◽

Vol 39 (2) ◽

pp. 193-199 ◽

Author(s):

A. Kager ◽

J.J. Liou

Keyword(s):

Numerical Analysis ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Two Dimensional ◽

Download Full-text

Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two-dimensional numerical simulation

IEEE Transactions on Electron Devices ◽

10.1109/16.249421 ◽

1993 ◽

Vol 40 (1) ◽

pp. 35-43 ◽

Author(s):

L.L. Liou ◽

J.L. Ebel ◽

C.I. Huang

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Thermal Effects ◽

Bipolar Transistors ◽

Two Dimensional

Download Full-text

Study on collector design of AlGaAs/GaAs heterojunction bipolar transistors by two-dimensional simulation

10.1109/bipol.1990.171161 ◽

2002 ◽

Author(s):

K. Horio ◽

Y. Iwatsu ◽

A. Oguchi ◽

H. Yanai

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Two Dimensional ◽

Dimensional Simulation

Download Full-text

Two-dimensional analysis of emitter resistance in the presence of interfacial oxide breakup in polysilicon emitter bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.155885 ◽

1992 ◽

Vol 39 (9) ◽

pp. 2139-2146 ◽

Author(s):

J.S. Hamel ◽

D.J. Roulston ◽

C.R. Selvakumar ◽

G.R. Booker

Keyword(s):

Dimensional Analysis ◽

Bipolar Transistors ◽

Two Dimensional ◽

Polysilicon Emitter

Download Full-text

Two-dimensional simulation of type-II InP/GaAsSb/InP double heterojunction bipolar transistors

physica status solidi (c) ◽

10.1002/pssc.200674269 ◽

2007 ◽

Vol 4 (5) ◽

pp. 1675-1679 ◽

Author(s):

N. G. M. Tao ◽

H. G. Liu ◽

C. R. Bolognesi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Type Ii ◽

Two Dimensional ◽

Double Heterojunction ◽

Dimensional Simulation

Download Full-text

Emitter‐collector reciprocity of double heterojunction bipolar transistors: A three‐dimensional analysis and proof for transistors with heavily doped and degenerate base regions

Journal of Applied Physics ◽

10.1063/1.339983 ◽

1988 ◽

Vol 63 (4) ◽

pp. 1212-1217 ◽

Author(s):

S. Noor Mohammad

Keyword(s):

Dimensional Analysis ◽

Heterojunction Bipolar Transistors ◽

Three Dimensional ◽

Bipolar Transistors ◽

Double Heterojunction ◽

Heavily Doped ◽

Degenerate Base

Download Full-text

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

ACS Nano ◽

10.1021/acsnano.7b05012 ◽

2017 ◽

Vol 11 (11) ◽

pp. 11015-11023 ◽

Author(s):

Che-Yu Lin ◽

Xiaodan Zhu ◽

Shin-Hung Tsai ◽

Shiao-Po Tsai ◽

Sidong Lei ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Resonant Tunneling ◽

Bipolar Transistors ◽

Two Dimensional ◽

Tunneling Phenomenon ◽

Atomic Monolayer

Download Full-text