Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates

2007 ◽  
Vol 90 (4) ◽  
pp. 042102 ◽  
Author(s):  
Hiroshi Yano ◽  
Hiroshi Nakao ◽  
Hidenori Mikami ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility

Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

2012 ◽  
Vol 5 (4) ◽  
pp. 041302 ◽  
Author(s):  
Mitsuo Okamoto ◽  
Youichi Makifuchi ◽  
Miwako Iijima ◽  
Yoshiyuki Sakai ◽  
Noriyuki Iwamuro ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility ◽  
Voltage Instability

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)

2008 ◽  
Vol 600-603 ◽  
pp. 791-794 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Dielectric Breakdown ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability

The channel mobility and oxide reliability of metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001) carbon face were investigated. The gate oxide was fabricated by using dry-oxidized film followed by pyrogenic reoxidation annealing (ROA). Significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. Furthermore, the field-effect inversion channel mobility (μFE) of MOSFETs fabricated by using pyrogenic ROA was as high as that of conventional 4H-SiC (0001) MOSFETs having the pyrogenic-oxidized gate oxide. It is suggested that the pyrogenic ROA of dry oxide as a method of gate oxide fabrication satisfies both channel mobility and oxide reliability on 4H-SiC (0001) carbon-face MOSFETs.

GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility

2007 ◽  
Vol 46 (No. 25) ◽  
pp. L599-L601 ◽  
Author(s):  
Hirotaka Otake ◽  
Shin Egami ◽  
Hiroaki Ohta ◽  
Yasushi Nanishi ◽  
Hidemi Takasu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

2011 ◽  
Vol 99 (7) ◽  
pp. 072117 ◽  
Author(s):  
A. Frazzetto ◽  
F. Giannazzo ◽  
P. Fiorenza ◽  
V. Raineri ◽  
F. Roccaforte
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility ◽  
Inversion Channel

scholarly journals Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

2012 ◽  
Vol 112 (8) ◽  
pp. 084501 ◽  
Author(s):  
Patrick Fiorenza ◽  
Filippo Giannazzo ◽  
Alessia Frazzetto ◽  
Fabrizio Roccaforte
Keyword(s):  
Surface Morphology ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility

Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors

2021 ◽  
Vol 129 (8) ◽  
pp. 084502
Author(s):  
Kenji Ito ◽  
Kazuyoshi Tomita ◽  
Daigo Kikuta ◽  
Masahiro Horita ◽  
Tetsuo Narita
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility
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