Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

2011 ◽  
Vol 99 (7) ◽  
pp. 072117 ◽  
Author(s):  
A. Frazzetto ◽  
F. Giannazzo ◽  
P. Fiorenza ◽  
V. Raineri ◽  
F. Roccaforte
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility ◽  
Inversion Channel

GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

2009 ◽  
Vol 105 (11) ◽  
pp. 114510 ◽  
Author(s):  
A. Pérez-Tomás ◽  
M. Placidi ◽  
X. Perpiñà ◽  
A. Constant ◽  
P. Godignon ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mobility Modeling ◽  
Channel Mobility ◽  
Inversion Channel ◽  
Effect Transistor

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)

2008 ◽  
Vol 600-603 ◽  
pp. 791-794 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Dielectric Breakdown ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability

The channel mobility and oxide reliability of metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001) carbon face were investigated. The gate oxide was fabricated by using dry-oxidized film followed by pyrogenic reoxidation annealing (ROA). Significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. Furthermore, the field-effect inversion channel mobility (μFE) of MOSFETs fabricated by using pyrogenic ROA was as high as that of conventional 4H-SiC (0001) MOSFETs having the pyrogenic-oxidized gate oxide. It is suggested that the pyrogenic ROA of dry oxide as a method of gate oxide fabrication satisfies both channel mobility and oxide reliability on 4H-SiC (0001) carbon-face MOSFETs.

GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility

2007 ◽  
Vol 46 (No. 25) ◽  
pp. L599-L601 ◽  
Author(s):  
Hirotaka Otake ◽  
Shin Egami ◽  
Hiroaki Ohta ◽  
Yasushi Nanishi ◽  
Hidemi Takasu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility
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