Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal–Oxide–Semiconductor Field-Effect Transistors Containing Step Bunching

2006 ◽  
Vol 45 (9A) ◽  
pp. 6830-6836 ◽  
Author(s):  
Kin Kiong Lee ◽  
Takeshi Ohshima ◽  
Akihiko Ohi ◽  
Hisayoshi Itoh ◽  
Gerhard Pensl
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Anomalous Increase ◽  
Channel Mobility ◽  
Step Bunching ◽  
Gamma Irradiated ◽  
Effective Channel

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1)

2008 ◽  
Vol 600-603 ◽  
pp. 791-794 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Dielectric Breakdown ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability

The channel mobility and oxide reliability of metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001) carbon face were investigated. The gate oxide was fabricated by using dry-oxidized film followed by pyrogenic reoxidation annealing (ROA). Significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. Furthermore, the field-effect inversion channel mobility (μFE) of MOSFETs fabricated by using pyrogenic ROA was as high as that of conventional 4H-SiC (0001) MOSFETs having the pyrogenic-oxidized gate oxide. It is suggested that the pyrogenic ROA of dry oxide as a method of gate oxide fabrication satisfies both channel mobility and oxide reliability on 4H-SiC (0001) carbon-face MOSFETs.

GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility

2007 ◽  
Vol 46 (No. 25) ◽  
pp. L599-L601 ◽  
Author(s):  
Hirotaka Otake ◽  
Shin Egami ◽  
Hiroaki Ohta ◽  
Yasushi Nanishi ◽  
Hidemi Takasu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility

Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors

2021 ◽  
Vol 129 (8) ◽  
pp. 084502
Author(s):  
Kenji Ito ◽  
Kazuyoshi Tomita ◽  
Daigo Kikuta ◽  
Masahiro Horita ◽  
Tetsuo Narita
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility
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