Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

2012 ◽  
Vol 5 (4) ◽  
pp. 041302 ◽  
Author(s):  
Mitsuo Okamoto ◽  
Youichi Makifuchi ◽  
Miwako Iijima ◽  
Yoshiyuki Sakai ◽  
Noriyuki Iwamuro ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Channel Mobility ◽  
Voltage Instability

Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

2007 ◽  
Vol 90 (14) ◽  
pp. 143502 ◽  
Author(s):  
C. Z. Zhao ◽  
M. B. Zahid ◽  
J. F. Zhang ◽  
G. Groeseneken ◽  
R. Degraeve ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Instability

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

2019 ◽  
Vol 216 (24) ◽  
pp. 1900538 ◽  
Author(s):  
Mingchao Yang ◽  
Liwen Sang ◽  
Meiyong Liao ◽  
Masataka Imura ◽  
Hongdong Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Instability
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