Three-dimensional simulation model of switching dynamics in phase change random access memory cells

The RESET operation of different design concepts for phase change random access memory (PCRAM) cell is studied and compared using a three dimensional simulation model. This numerical algorithm comprises four interacting sub-models, which describe the electrical, thermal, phase change, and percolation dynamics in the PCRAM devices during the switching operation. The so-called vertical, confined, and lateral cell geometries are evaluated in terms of their current requirements for RESET operations, which is one of the most critical issues for an achievement of high integration densities. The advantages of the confined and lateral cell architecture as compared to the conventional vertical cell concept are explored, demonstrating their benefits of advanced thermal management and minimized current defined area. The simulation results agree well with experimental features of the RESET operation for the PCRAM design concepts studied.

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THERMAL EXPANSION OF PHASE-CHANGE RANDOM ACCESS MEMORY CELLS

MRS Proceedings ◽

10.1557/proc-1072-g03-18 ◽

2008 ◽

Vol 1072 ◽

Cited By ~ 2

Author(s):

Jianming Li ◽

L.P. Shi ◽

H.X. Yang ◽

K.G. Lim ◽

X.S. Miao ◽

...

Keyword(s):

Thermal Stress ◽

Phase Change ◽

Electrical Power ◽

Thermal Strain ◽

Three Dimensional ◽

Amorphous State ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Three Dimensional Finite Element

ABSTRACTThree-dimensional finite element method (FEM) is used to solve the thermal strain-stress fields of phase-change random access memory (PCRAM) cells. Simulation results show that thermal stress concentrates at the interfaces between electrodes and phase change layer and it is significantly larger than that within the phase change layer. It has been found that the peak thermal stress is linearly related to the voltage of electrical pulse in the reset process but once amorphous state is produced in the cell, a nonlinear relationship between thermal stress and electrical power exists. This paper reported the change of thermal stress during set process. It was found that the stress decreases significantly due to the amorphous active region during set processes.

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Three-Dimensional Simulations of RESET Operation in Phase-Change Random Access Memory with Blade-Type Like Phase Change Layer by Finite Element Modeling

Chinese Physics Letters ◽

10.1088/0256-307x/33/9/098502 ◽

2016 ◽

Vol 33 (9) ◽

pp. 098502 ◽

Cited By ~ 1

Author(s):

Qiu-Xue Jin ◽

Bo Liu ◽

Yan Liu ◽

Wei-Wei Wang ◽

Heng Wang ◽

...

Keyword(s):

Finite Element ◽

Finite Element Modeling ◽

Phase Change ◽

Three Dimensional ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Element Modeling ◽

Reset Operation ◽

Three Dimensional Simulations

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Thermal Stress Model for Phase Change Random Access Memory

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.37 ◽

2007 ◽

Vol 124-126 ◽

pp. 37-40 ◽

Cited By ~ 2

Author(s):

Sung Soon Kim ◽

Jun Hyun Bae ◽

Woo Hyuck Do ◽

Kyun Ho Lee ◽

Young Tae Kim ◽

...

Keyword(s):

Phase Transformation ◽

Thermal Stress ◽

Phase Change ◽

Simulation Model ◽

Random Access ◽

Random Access Memory ◽

Stress Model ◽

Access Memory ◽

Simulation Results ◽

High Level

Thermal stress model considering the effect of phase transformation is proposed for Phase-Change Random Access Memory (PRAM). The results of simulation show that the high level of stress is generated on the junction where Ge2Sb2Te5(GST), TiN and SiO2 meet together. The high level of stress can also be observed in the interface between TiN and SiO2. From simulation results, it can be predictable that delamination between GST and TiN can occur during operation of PRAM. It is expected that the simulation model, which has been developed in this research, is very useful tool for PRAM device design.

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Elevated-Confined Phase-Change Random Access Memory Cells

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dd16 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DD16 ◽

Cited By ~ 3

Author(s):

Hock Lee ◽

textscShi Luping ◽

textscZhao Rong ◽

textscYang Hongxin ◽

textscLim Kian Guan ◽

...

Keyword(s):

Phase Change ◽

Random Access ◽

Random Access Memory ◽

Memory Cells ◽

Access Memory

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Ga-doped indium oxide nanowire phase change random access memory cells

Nanotechnology ◽

10.1088/0957-4484/25/5/055205 ◽

2014 ◽

Vol 25 (5) ◽

pp. 055205 ◽

Cited By ~ 8

Author(s):

Bo Jin ◽

Taekyung Lim ◽

Sanghyun Ju ◽

Marat I Latypov ◽

Hyoung Seop Kim ◽

...

Keyword(s):

Phase Change ◽

Indium Oxide ◽

Random Access ◽

Random Access Memory ◽

Memory Cells ◽

Access Memory

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Reversible switching in bicontinuous structure for phase change random access memory application

Nanoscale ◽

10.1039/d0nr09139a ◽

2021 ◽

Vol 13 (8) ◽

pp. 4678-4684

Author(s):

Yan Cheng ◽

Yonghui Zheng ◽

Zhitang Song

Keyword(s):

Phase Change ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Bicontinuous Structure ◽

Amorphous Si

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.

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