Ga-doped indium oxide nanowire phase change random access memory cells

2014 ◽  
Vol 25 (5) ◽  
pp. 055205 ◽  
Author(s):  
Bo Jin ◽  
Taekyung Lim ◽  
Sanghyun Ju ◽  
Marat I Latypov ◽  
Hyoung Seop Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Indium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Cells ◽  
Access Memory

Elevated-Confined Phase-Change Random Access Memory Cells

2010 ◽  
Vol 49 (4) ◽  
pp. 04DD16 ◽  
Author(s):  
Hock Lee ◽  
textscShi Luping ◽  
textscZhao Rong ◽  
textscYang Hongxin ◽  
textscLim Kian Guan ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Cells ◽  
Access Memory

scholarly journals Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory

2014 ◽  
Vol 104 (10) ◽  
pp. 103510 ◽  
Author(s):  
Bo Jin ◽  
Taekyung Lim ◽  
Sanghyun Ju ◽  
Marat I. Latypov ◽  
Dong-Hai Pi ◽  
...  
Keyword(s):  
Power Consumption ◽  
Thermal Resistance ◽  
Phase Change ◽  
Indium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

Reversible switching in bicontinuous structure for phase change random access memory application

Nanoscale ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 4678-4684
Author(s):  
Yan Cheng ◽  
Yonghui Zheng ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bicontinuous Structure ◽  
Amorphous Si

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Temperature Dependence of Phase-Change Random Access Memory Cell

2006 ◽  
Vol 45 (5A) ◽  
pp. 3955-3958 ◽  
Author(s):  
X. S. Miao ◽  
L. P. Shi ◽  
H. K. Lee ◽  
J. M. Li ◽  
R. Zhao ◽  
...  
Keyword(s):  
Phase Change ◽  
Temperature Dependence ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Access Memory

scholarly journals Thermal characterization and analysis of phase change random access memory

2005 ◽  
Vol 98 (1) ◽  
pp. 013520 ◽  
Author(s):  
V. Giraud ◽  
J. Cluzel ◽  
V. Sousa ◽  
A. Jacquot ◽  
A. Dauscher ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Thermal Characterization ◽  
Access Memory

Analysis of Grain Boundary Dependent Memory Characteristics in Poly-Si One-Transistor Dynamic Random-Access Memory

2021 ◽  
Vol 21 (8) ◽  
pp. 4216-4222
Author(s):  
Songyi Yoo ◽  
In-Man Kang ◽  
Sung-Jae Cho ◽  
Wookyung Sun ◽  
Hyungsoon Shin
Keyword(s):  
Strong Electric Field ◽  
Memory Performance ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Thin Body ◽  
Memory Cells ◽  
Access Memory ◽  
Memory Characteristics

A capacitorless one-transistor dynamic random-access memory cell with a polysilicon body (poly-Si 1T-DRAM) has a cost-effective fabrication process and allows a three-dimensional stacked architecture that increases the integration density of memory cells. Also, since this device uses grain boundaries (GBs) as a storage region, it can be operated as a memory cell even in a thin body device. GBs are important to the memory characteristics of poly-Si 1T-DRAM because the amount of trapped charge in the GBs determines the memory’s data state. In this paper, we report on a statistical analysis of the memory characteristics of poly-Si 1T-DRAM cells according to the number and location of GBs using TCAD simulation. As the number of GBs increases, the sensing margin and retention time of memory cells deteriorate due to increasing trapped electron charge. Also, “0” state current increases and memory performance degrades in cells where all GBs are adjacent to the source or drain junction side in a strong electric field. These results mean that in poly-Si 1T-DRAM design, the number and location of GBs in a channel should be considered for optimal memory performance.

THERMAL EXPANSION OF PHASE-CHANGE RANDOM ACCESS MEMORY CELLS

2008 ◽  
Vol 1072 ◽  
Author(s):  
Jianming Li ◽  
L.P. Shi ◽  
H.X. Yang ◽  
K.G. Lim ◽  
X.S. Miao ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Phase Change ◽  
Electrical Power ◽  
Thermal Strain ◽  
Three Dimensional ◽  
Amorphous State ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Three Dimensional Finite Element

ABSTRACTThree-dimensional finite element method (FEM) is used to solve the thermal strain-stress fields of phase-change random access memory (PCRAM) cells. Simulation results show that thermal stress concentrates at the interfaces between electrodes and phase change layer and it is significantly larger than that within the phase change layer. It has been found that the peak thermal stress is linearly related to the voltage of electrical pulse in the reset process but once amorphous state is produced in the cell, a nonlinear relationship between thermal stress and electrical power exists. This paper reported the change of thermal stress during set process. It was found that the stress decreases significantly due to the amorphous active region during set processes.

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