Localization and interdot carrier transfer in CdSe and CdZnMnSe quantum dots determined by cw and time-resolved photoluminescence

2007 ◽  
Vol 90 (20) ◽  
pp. 201916 ◽  
Author(s):  
J. H. Park ◽  
D. G. Choi ◽  
T. K. Lee ◽  
Eunsoon Oh ◽  
Sanghoon Lee ◽  
...  
1999 ◽  
Vol 38 (Part 2, No. 9A/B) ◽  
pp. L1006-L1008 ◽  
Author(s):  
Mayuko Fudeta ◽  
Hajime Asahi ◽  
Kumiko Asami ◽  
Yukio Narukawa ◽  
Yoichi Kawakami ◽  
...  

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1439-L1441 ◽  
Author(s):  
Atsushi Tackeuchi ◽  
Yoshiaki Nakata ◽  
Shunichi Muto ◽  
Yoshihiro Sugiyama ◽  
Tatsuya Usuki ◽  
...  

2015 ◽  
Vol 167 ◽  
pp. 333-338 ◽  
Author(s):  
Nikolaos Droseros ◽  
Kostas Seintis ◽  
Mihalis Fakis ◽  
Spiros Gardelis ◽  
Androula G. Nassiopoulou

1996 ◽  
Vol 54 (16) ◽  
pp. 11548-11554 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
P. J. Poole ◽  
A. Wojs ◽  
P. Hawrylak ◽  
...  

1999 ◽  
Vol 571 ◽  
Author(s):  
W. V. Schoenfeld ◽  
T. Lundstrom ◽  
P. M. Petroff

ABSTRACTWe present an InAs QDs structure designed to separate and store photo-generated electron-hole pairs. Charge separation in the structure is demonstrated using power dependent photoluminescence and biased photoluminescence. Preliminary data from time resolved photoluminescence suggest storage times in the device in the μsec range.


2010 ◽  
Vol 96 (1) ◽  
pp. 011901 ◽  
Author(s):  
M. Syperek ◽  
P. Leszczyński ◽  
J. Misiewicz ◽  
E. M. Pavelescu ◽  
C. Gilfert ◽  
...  

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