Charge Separation Between Strain Coupled Quantum Dots in a Self-Assembled InAs Quantum Dot Structure

1999 ◽  
Vol 571 ◽  
Author(s):  
W. V. Schoenfeld ◽  
T. Lundstrom ◽  
P. M. Petroff
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Preliminary Data ◽  
Charge Separation ◽  
Electron Hole ◽  
Coupled Quantum Dots ◽  
Time Resolved ◽  
Inas Quantum Dot ◽  
Storage Times ◽  
Time Resolved Photoluminescence

ABSTRACTWe present an InAs QDs structure designed to separate and store photo-generated electron-hole pairs. Charge separation in the structure is demonstrated using power dependent photoluminescence and biased photoluminescence. Preliminary data from time resolved photoluminescence suggest storage times in the device in the μsec range.

Intra-dot relaxation and dephasing rates from time-resolved photoluminescence from InAs quantum dot ensembles

2009 ◽  
Vol 149 (35-36) ◽  
pp. 1485-1492 ◽  
Author(s):  
Alexej Chernikov ◽  
Swantje Horst ◽  
Stephan W. Koch ◽  
Sangam Chatterjee ◽  
Wolfgang W. Rühle ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Time Resolved ◽  
Inas Quantum Dot ◽  
Time Resolved Photoluminescence

Degradation Studies of Colloidal Quantum Dot Light-Emitting Diodes

2011 ◽  
Vol 1286 ◽  
Author(s):  
Jie Liu ◽  
Chuang Xie ◽  
Yu Zhang ◽  
Wenjia Hu ◽  
Shawn Pickering ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Steady State ◽  
Quantum Dot ◽  
Thermal Instability ◽  
Light Emitting Diodes ◽  
Degradation Mechanism ◽  
Time Resolved ◽  
Light Emitting ◽  
Colloidal Quantum Dot ◽  
Time Resolved Photoluminescence

ABSTRACTThe degradation mechanism of CdSe/ZnS quantum dots (QDs) light-emitting diodes (LEDs) was investigated with steady-state and time-resolved photoluminescence measurements. Our study reveals that the degradation is associated with the decreasing quantum efficiency of the CdSe/ZnS QDs in the devices. Two mechanisms that cause the efficiency reduction were verified in the experiments: i.e., thermal instability and luminescence quenching.

The direct observation of charge separation dynamics in CdSe quantum dots/cobaloxime hybrids

2016 ◽  
Vol 18 (6) ◽  
pp. 4300-4303 ◽  
Author(s):  
J. Huang ◽  
Y. Tang ◽  
K. L. Mulfort ◽  
X. Zhang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Charge Separation ◽  
Cdse Quantum Dots ◽  
X Ray ◽  
Molecular Catalyst ◽  
Cdse Quantum Dot ◽  
Photoinduced Charge Separation ◽  
X Ray Absorption ◽  
Photoinduced Charge

In this work, we investigated photoinduced charge separation dynamics in a CdSe quantum dot/cobaloxime molecular catalyst hybrid using the combination of transient optical (OTA) and X-ray absorption (XTA) spectroscopy.

Robust single-mode lasers based on hexagonal CdS microflakes

2020 ◽  
Vol 8 (32) ◽  
pp. 11201-11208
Author(s):  
Yang Mi ◽  
Yaoyao Wu ◽  
Jinchun Shi ◽  
Sheng-Nian Luo
Keyword(s):  
Radiative Recombination ◽  
Single Mode ◽  
Whispering Gallery Mode ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
High Quality ◽  
Time Resolved ◽  
Whispering Gallery ◽  
Electron Hole Plasma ◽  
Time Resolved Photoluminescence

We have achieved single-mode whispering-gallery-mode lasing in CdS microflakes with sharp linewidth (∼0.12 nm) and high quality factor (∼4200). Such lasers are superior to previous CdS lasers in these lasing parameters. Through time-resolved photoluminescence measurements, electron–hole plasma recombination is established to be the lasing mechanism. The radiative recombination rate of CdS microflakes is enhanced by a factor of ∼4.7 due to the Purcell effect.

EXCITONIC SIDE BANDS OF INNER-SHELL EXCITATIONS IN RARE GAS SOLIDS

2002 ◽  
Vol 09 (02) ◽  
pp. 1333-1338 ◽  
Author(s):  
S. VIELHAUER ◽  
M. KIRM ◽  
V. KISAND ◽  
E. NEGODIN ◽  
E. SOMBROWSKI ◽  
...  
Keyword(s):  
Free Exciton ◽  
Rare Gas ◽  
Excitation Threshold ◽  
Energy Position ◽  
Excitation Spectra ◽  
Electron Hole ◽  
Time Resolved ◽  
Ionization Limit ◽  
Time Resolved Photoluminescence ◽  
Hole Recombination

Valence-exciton luminescence under inner-shell excitation of the rare gas solids Xe, Kr, and Ar has been measured using time-resolved photoluminescence. Two different processes for exciton creation can be distinguished: creation of "prompt" excitons immediately after excitation (within the experimental time resolution), and creation of "delayed" excitons through electron–hole recombination. The decay structure of the exciton emission in the range of inner-shell excitation is characterized by the coexistence of the two processes. Time-resolved excitation spectra near the 2p edge in Ar, the 3d edge in Kr, and the 4d edge in Xe are discussed. The process of prompt exciton creation is strongly enhanced above an excitation threshold at the energy position of the ionization limit of the core state plus the energy of the valence free exciton.

Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice

1999 ◽  
Vol 38 (Part 2, No. 9A/B) ◽  
pp. L1006-L1008 ◽  
Author(s):  
Mayuko Fudeta ◽  
Hajime Asahi ◽  
Kumiko Asami ◽  
Yukio Narukawa ◽  
Yoichi Kawakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Short Period ◽  
Time Resolved Photoluminescence

Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1439-L1441 ◽  
Author(s):  
Atsushi Tackeuchi ◽  
Yoshiaki Nakata ◽  
Shunichi Muto ◽  
Yoshihiro Sugiyama ◽  
Tatsuya Usuki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Coupled Quantum Dots ◽  
Time Resolved ◽  
Carrier Transfer
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