Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2762291 ◽

2007 ◽

Vol 91 (4) ◽

pp. 042904 ◽

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Manhong Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Scaling Down ◽

Metal Oxide Semiconductor Capacitor

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Quantitative Study of Charge‐to‐Breakdown of Thin Gate Oxide for a p+‐Poly‐Si Metal Oxide Semiconductor Capacitor

Journal of The Electrochemical Society ◽

10.1149/1.1837471 ◽

1997 ◽

Vol 144 (2) ◽

pp. 698-704

Author(s):

Li‐shuenn Wang ◽

Mou‐shiung Lin

Keyword(s):

Metal Oxide ◽

Quantitative Study ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

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Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700180 ◽

2017 ◽

Vol 11 (9) ◽

pp. 1700180 ◽

Author(s):

Li Ning Liu ◽

Hoi Wai Choi ◽

Jing Ping Xu ◽

Pui To Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2017.2702717 ◽

2017 ◽

Vol 17 (2) ◽

pp. 458-462 ◽

Author(s):

Han-Han Lu ◽

Jing-Ping Xu ◽

Lu Liu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2396972 ◽

2015 ◽

Vol 62 (4) ◽

pp. 1235-1240 ◽

Author(s):

Li-Sheng Wang ◽

Jing-Ping Xu ◽

Lu Liu ◽

Han-Han Lu ◽

Pui-To Lai ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.3475015 ◽

2010 ◽

Vol 97 (6) ◽

pp. 062908 ◽

Author(s):

G. He ◽

L. D. Zhang ◽

M. Liu ◽

Z. Q. Sun

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Aluminum Oxynitride ◽

Metal Oxide Semiconductor Capacitor

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Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2164327 ◽

2006 ◽

Vol 88 (2) ◽

pp. 022106 ◽

Author(s):

S. Koveshnikov ◽

W. Tsai ◽

I. Ok ◽

J. C. Lee ◽

V. Torkanov ◽

...

Keyword(s):

Metal Oxide ◽

Amorphous Silicon ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

High K ◽

Interface Passivation ◽

Silicon Interface

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Textured Magnesium Titanate as Gate Oxide for GaN-Based Metal-Oxide-Semiconductor Capacitor

Journal of the American Ceramic Society ◽

10.1111/j.1551-2916.2011.04439.x ◽

2011 ◽

Vol 94 (4) ◽

pp. 1005-1007 ◽

Author(s):

Chu-Yun Hsiao ◽

Chuan-Feng Shih ◽

Chih-Hua Chien ◽

Cheng-Liang Huang

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Magnesium Titanate ◽

Metal Oxide Semiconductor Capacitor

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Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2775048 ◽

2007 ◽

Vol 91 (8) ◽

pp. 082908 ◽

Author(s):

Sung Il Park ◽

Injo Ok ◽

Hyoung-Sub Kim ◽

Feng Zhu ◽

Manhong Zhang ◽

...

Keyword(s):

Gallium Arsenide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Interface Passivation ◽

Silicon Interface ◽

Metal Oxide Semiconductor Capacitor

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Positive charge and interface state generation in a thin gate oxide (30 nm) metal‐oxide‐semiconductor capacitor

Journal of Applied Physics ◽

10.1063/1.356396 ◽

1994 ◽

Vol 75 (3) ◽

pp. 1592-1598 ◽

Author(s):

Abdelillah El‐Hdiy

Keyword(s):

Metal Oxide ◽

Positive Charge ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

State Generation ◽

Thin Gate Oxide ◽

Metal Oxide Semiconductor Capacitor

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Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

Applied Physics Letters ◽

10.1063/1.4936329 ◽

2015 ◽

Vol 107 (21) ◽

pp. 213501 ◽

Author(s):

L. N. Liu ◽

H. W. Choi ◽

J. P. Xu ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Oxide Traps ◽

Metal Oxide Semiconductor Capacitor

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