Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric

2015 ◽  
Vol 62 (4) ◽  
pp. 1235-1240 ◽  
Author(s):  
Li-Sheng Wang ◽  
Jing-Ping Xu ◽  
Lu Liu ◽  
Han-Han Lu ◽  
Pui-To Lai ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Passivation Layer ◽  
Oxide Semiconductor ◽  
Metal Oxide Semiconductor Capacitor

High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

2007 ◽  
Vol 91 (9) ◽  
pp. 093509 ◽  
Author(s):  
N. Goel ◽  
P. Majhi ◽  
W. Tsai ◽  
M. Warusawithana ◽  
D. G. Schlom ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Indium Content ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Indium Content ◽  
Metal Oxide Semiconductor Capacitor

Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3as gate dielectric

2016 ◽  
Vol 9 (12) ◽  
pp. 121002 ◽  
Author(s):  
Kexiong Zhang ◽  
Meiyong Liao ◽  
Masataka Imura ◽  
Toshihide Nabatame ◽  
Akihiko Ohi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Hysteresis ◽  
Metal Oxide Semiconductor Capacitor
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