Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700180 ◽

2017 ◽

Vol 11 (9) ◽

pp. 1700180 ◽

Author(s):

Li Ning Liu ◽

Hoi Wai Choi ◽

Jing Ping Xu ◽

Pui To Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2017.2702717 ◽

2017 ◽

Vol 17 (2) ◽

pp. 458-462 ◽

Author(s):

Han-Han Lu ◽

Jing-Ping Xu ◽

Lu Liu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Layer

Chinese Physics Letters ◽

10.1088/0256-307x/34/4/047303 ◽

2017 ◽

Vol 34 (4) ◽

pp. 047303 ◽

Author(s):

Han-Han Lu ◽

Jing-Ping Xu ◽

Lu Liu

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2356597 ◽

2014 ◽

Vol 61 (11) ◽

pp. 3608-3612 ◽

Author(s):

Feng Ji ◽

Jing-Ping Xu ◽

Yong Huang ◽

Lu Liu ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer

Applied Physics Letters ◽

10.1063/1.4800228 ◽

2013 ◽

Vol 102 (14) ◽

pp. 142906 ◽

Author(s):

Mei Zhao ◽

Renrong Liang ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Surface Passivation ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2762291 ◽

2007 ◽

Vol 91 (4) ◽

pp. 042904 ◽

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Manhong Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Scaling Down ◽

Metal Oxide Semiconductor Capacitor

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Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2396972 ◽

2015 ◽

Vol 62 (4) ◽

pp. 1235-1240 ◽

Author(s):

Li-Sheng Wang ◽

Jing-Ping Xu ◽

Lu Liu ◽

Han-Han Lu ◽

Pui-To Lai ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer

Applied Physics Letters ◽

10.1063/1.2798248 ◽

2007 ◽

Vol 91 (15) ◽

pp. 152905 ◽

Author(s):

J. P. Xu ◽

F. Ji ◽

C. X. Li ◽

P. T. Lai ◽

J. G. Guan ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2297995 ◽

2014 ◽

Vol 61 (3) ◽

pp. 742-746 ◽

Author(s):

Li-Sheng Wang ◽

Lu Liu ◽

Jing-Ping Xu ◽

Shu-Yan Zhu ◽

Yuan Huang ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer

Applied Physics Letters ◽

10.1063/1.2954012 ◽

2008 ◽

Vol 92 (26) ◽

pp. 262902 ◽

Author(s):

X. F. Zhang ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai ◽

C. L. Chan ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.3475015 ◽

2010 ◽

Vol 97 (6) ◽

pp. 062908 ◽

Author(s):

G. He ◽

L. D. Zhang ◽

M. Liu ◽

Z. Q. Sun

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Aluminum Oxynitride ◽

Metal Oxide Semiconductor Capacitor

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