Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer

2017 ◽  
Vol 11 (9) ◽  
pp. 1700180 ◽  
Author(s):  
Li Ning Liu ◽  
Hoi Wai Choi ◽  
Jing Ping Xu ◽  
Pui To Lai
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Passivation Layer ◽  
Oxide Semiconductor ◽  
Metal Oxide Semiconductor Capacitor

Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer

2007 ◽  
Vol 91 (4) ◽  
pp. 042904 ◽  
Author(s):  
Hyoung-Sub Kim ◽  
Injo Ok ◽  
Manhong Zhang ◽  
F. Zhu ◽  
S. Park ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Passivation Layer ◽  
Oxide Semiconductor ◽  
Scaling Down ◽  
Metal Oxide Semiconductor Capacitor

Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

2014 ◽  
Vol 61 (3) ◽  
pp. 742-746 ◽  
Author(s):  
Li-Sheng Wang ◽  
Lu Liu ◽  
Jing-Ping Xu ◽  
Shu-Yan Zhu ◽  
Yuan Huang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Oxide Semiconductor Capacitor
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