Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices

2007 ◽  
Vol 91 (19) ◽  
pp. 192111 ◽  
Author(s):  
Man Chang ◽  
Musarrat Hasan ◽  
Seungjae Jung ◽  
Hokyung Park ◽  
Minseok Jo ◽  
...  
Keyword(s):  
High Pressure ◽  
Flash Memory ◽  
Deuterium Oxide ◽  
Memory Devices ◽  
Interface Quality ◽  
Nitride Oxide

The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory devices

2008 ◽  
Vol 93 (17) ◽  
pp. 172115 ◽  
Author(s):  
Sungho Heo ◽  
Man Chang ◽  
Yongkyu Ju ◽  
Seungjae Jung ◽  
Hyunsang Hwang
Keyword(s):  
Flash Memory ◽  
Laser Annealing ◽  
Memory Devices ◽  
Krf Laser ◽  
Nitride Oxide
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