Effect of High-Pressure Oxygen Annealing on Electrical Characteristics of Metal–Alumina–Nitride–Oxide–Silicon-Type Flash Memory Devices

2009 ◽  
Vol 48 (4) ◽  
pp. 04C065 ◽  
Author(s):  
Yongkyu Ju ◽  
Man Chang ◽  
Seungjae Jung ◽  
Minseok Jo ◽  
JoonMyoung Lee ◽  
...  
Keyword(s):  
High Pressure ◽  
Flash Memory ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Oxygen Annealing ◽  
Pressure Oxygen ◽  
High Pressure Oxygen ◽  
Nitride Oxide

Effects of high pressure oxygen annealing on Hf0.5Zr0.5O2 ferroelectric device

2021 ◽  
Author(s):  
Hyungwoo Kim ◽  
Alireza Kashir ◽  
Seungyeol Oh ◽  
Hojung Jang ◽  
Hyunsang Hwang
Keyword(s):  
High Pressure ◽  
Oxygen Annealing ◽  
Pressure Oxygen ◽  
High Pressure Oxygen

Reducing dielectric loss in CaCu3Ti4O12 thin films by high-pressure oxygen annealing

2015 ◽  
Vol 3 (14) ◽  
pp. 3438-3444 ◽  
Author(s):  
Y. Lin ◽  
D. Y. Feng ◽  
M. Gao ◽  
Y. D. Ji ◽  
L. B. Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Dielectric Loss ◽  
Oxygen Annealing ◽  
Pressure Oxygen ◽  
High Pressure Oxygen ◽  
Strain Status

High pressure oxygen annealing could reduce the dielectric loss in CCTO films as well as induce obvious difference in strain status.

Effect of High-Pressure Oxygen Annealing on Bi2SiO5-Added Ferroelectric Thin Films

2002 ◽  
Vol 41 (Part 2, No. 10B) ◽  
pp. L1164-L1166 ◽  
Author(s):  
Takeshi Kijima ◽  
Yoshihito Kawashima ◽  
Yasushi Idemoto ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Ferroelectric Thin Films ◽  
Oxygen Annealing ◽  
Pressure Oxygen ◽  
High Pressure Oxygen

Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices

2007 ◽  
Vol 91 (19) ◽  
pp. 192111 ◽  
Author(s):  
Man Chang ◽  
Musarrat Hasan ◽  
Seungjae Jung ◽  
Hokyung Park ◽  
Minseok Jo ◽  
...  
Keyword(s):  
High Pressure ◽  
Flash Memory ◽  
Deuterium Oxide ◽  
Memory Devices ◽  
Interface Quality ◽  
Nitride Oxide

Improved magnetic trapped field in thin-wall YBCO single-domain samples by high-pressure oxygen annealing

2008 ◽  
Vol 151 (1) ◽  
pp. 53-59 ◽  
Author(s):  
Xavier Chaud ◽  
Tatiana Prikhna ◽  
Yaroslav Savchuk ◽  
Anne Joulain ◽  
Evert Haanappel ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Domain ◽  
Thin Wall ◽  
Oxygen Annealing ◽  
Trapped Field ◽  
Pressure Oxygen ◽  
High Pressure Oxygen
Sign in / Sign up

Export Citation Format

Share Document