Electrical Characteristics of Nanoscale NAND Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Devices Fabricated on SOI Substrates

2011 ◽  
Vol 11 (8) ◽  
pp. 7512-7515
Author(s):  
Ju Tae Ryu ◽  
Joo Hyung You ◽  
Keon-Ho Yoo ◽  
Tae Whan Kim
2013 ◽  
Vol 658 ◽  
pp. 120-123
Author(s):  
Sang Youl Lee ◽  
Jae Sub Oh ◽  
Seung Dong Yang ◽  
Ho Jin Yun ◽  
Kwang Seok Jeong ◽  
...  

For the system on panel applications, we fabricated and analyzed the polycrystalline silicon (poly-Si) silicon-oxide-nitride-oxide-silicon (SONOS) memory device on different buffer layer such as oxide or nitride. The threshold voltage (VT) and transconductance (gm) are extracted from each device and the X-Ray Diffraction (XRD) measurement is carried out to interpret these characteristics. The results show the device on oxide layer has higher mobility and lower VT than on nitride layer. From the XRD spectra, it can be explained by the fact that the grain size of poly-Si on oxide layer has larger than on nitride layer. The both devices show program/erase characteristics as the potential of SOP memory devices.


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