Low leakage current gate dielectrics prepared by ion beam assisted deposition for organic thin film transistors

2007 ◽  
Vol 102 (12) ◽  
pp. 126101 ◽  
Author(s):  
Chang Su Kim ◽  
Sung Jin Jo ◽  
Jong Bok Kim ◽  
Seung Yoon Ryu ◽  
Joo Hyon Noh ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Ion Beam ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Leakage ◽  
Ion Beam Assisted Deposition ◽  
Low Leakage Current

Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors

2006 ◽  
Vol 89 (9) ◽  
pp. 092101 ◽  
Author(s):  
Sunho Jeong ◽  
Dongjo Kim ◽  
Sul Lee ◽  
Bong-Kyun Park ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Inorganic Hybrid ◽  
Low Leakage ◽  
Low Leakage Current

scholarly journals Vertical Organic Thin‐Film Transistors with an Anodized Permeable Base for Very Low Leakage Current

2019 ◽  
Vol 31 (19) ◽  
pp. 1900917 ◽  
Author(s):  
Felix Dollinger ◽  
Kyung‐Geun Lim ◽  
Yang Li ◽  
Erjuan Guo ◽  
Peter Formánek ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

scholarly journals Tetracene Based OTFT with Nd2O3-dielectric Layer

2010 ◽  
Vol 2 (2) ◽  
pp. 214-220 ◽  
Author(s):  
D. Saikia ◽  
R. Sarma ◽  
P. Saikia ◽  
P. K. Saikia
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Hole Concentration ◽  
Rare Earth Oxide ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10-4 cm2/V.s, ON-OFF ratio 3.3x102, sub-threshold swing 0.06 V/decade and hole concentration 8.74x1017 cm-3. Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density. © 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v2i2.4094               J. Sci. Res. 2 (2), 214-220 (2010) 

Mechanically flexible low-leakage multilayer gate dielectrics for flexible organic thin film transistors

2008 ◽  
Vol 93 (1) ◽  
pp. 013305 ◽  
Author(s):  
Y. G. Seol ◽  
H. Y. Noh ◽  
S. S. Lee ◽  
J. H. Ahn ◽  
N.-E. Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Leakage
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