Photoelectron spectroscopic investigation of nitrogen chemical states in ZnO: (N,Ga) thin films

2008 ◽  
Vol 103 (10) ◽  
pp. 103704 ◽  
Author(s):  
H. Wang ◽  
H. P. Ho ◽  
J. B. Xu
2018 ◽  
Vol 10 (18) ◽  
pp. 16203-16209 ◽  
Author(s):  
Ahra Cho ◽  
Chan Su Han ◽  
Meenjoo Kang ◽  
Wooseok Choi ◽  
Jihwan Lee ◽  
...  

1995 ◽  
Vol 385 ◽  
Author(s):  
Y. Nakamura ◽  
Y. Suzuki ◽  
Y. Watanabe ◽  
S. Hirayama

ABSTRACTThe adhesive strength of polyimide thin films on an alumina substrate has been studied by the pull test. Polyimide thin films were cured at various temperatures from 300 to 400°C, followed by etching in an oxygen plasma for 3 min. After metallization with chromium and copper, the pull test was carried out. It is found that the adhesive strength increases with an increase of the cure temperature. However the strength deteriorates noticeably at the cure temperature of 400°C. A possible reason for this is the variation of chemical states in the polyimide thin films.


2009 ◽  
Vol 479 (1-3) ◽  
pp. 65-69 ◽  
Author(s):  
Kyoung Hyuk Jang ◽  
Eun Sik Kim ◽  
Liang Shi ◽  
Jung Hyun Jeong ◽  
Hyo Jin Seo

2018 ◽  
Vol 453 ◽  
pp. 365-372 ◽  
Author(s):  
Xiaoli Zhu ◽  
Matteo Todeschini ◽  
Alice Bastos da Silva Fanta ◽  
Lintao Liu ◽  
Flemming Jensen ◽  
...  

2011 ◽  
Vol 25 (12) ◽  
pp. 1629-1635 ◽  
Author(s):  
YANJUN ZHOU ◽  
FANG HE ◽  
YUAN HUANG ◽  
YIZAO WAN ◽  
YULIN WANG

By using reactive magnetron sputtering system, titanium dioxide thin films were fabricated onto quartz substrate, and then modified by Ge and Si atoms that were introduced with ion implantation method. XRD, AFM, XPS, and UV-vis were used to characterize these films, and X-ray photoelectron spectroscopy (XPS) was adopted to examine the atomic chemical states of implanted titanium dioxide thin films. The results show that there are Ge and silicon oxides precipitations in TiO 2 matrices. The implanted Ge + Si thin film exhibits an intense absorption band within visible region, which will further benefit its practical applications.


2016 ◽  
Vol 49 (14) ◽  
pp. 145003 ◽  
Author(s):  
M Gueye ◽  
F Zighem ◽  
M Belmeguenai ◽  
M S Gabor ◽  
C Tiusan ◽  
...  

2011 ◽  
Vol 257 (8) ◽  
pp. 3440-3445 ◽  
Author(s):  
H. Wang ◽  
P. Wu ◽  
X.F. Li ◽  
S. Chen ◽  
S.P. Zhang ◽  
...  

2011 ◽  
Vol 299-300 ◽  
pp. 558-561 ◽  
Author(s):  
Yan Jun Zhou ◽  
Fang He ◽  
Jin Gang Qi ◽  
Yu Lin Wang

By using the sol-gel method, TiO2 thin films and Ge doped TiO2 composite thin films were fabricated onto quartz substrates. XRD, XPS and UV-vis were used to characterize the phase structure, the atomic chemical states and optical absorption of these composite TiO2 thin films. XRD results indicate that diffraction peak of anatase is observed in samples. XPS result reveals that there is Ge crystal in Ge doped films which were prepared by sol-gel method, and Ge exists as elemental Ge and GeO2 in the films. The composite TiO2 thin films by sol-gel method exhibits the absorption shift to visible region due to Ge doped TiO2 thin films.


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