Molecular-beam epitaxial growth of III–V semiconductors on Ge∕Si for metal-oxide-semiconductor device fabrication
2009 ◽
Vol 311
(7)
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pp. 1962-1971
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Keyword(s):
Keyword(s):
1993 ◽
Vol 11
(6)
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pp. 2897
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1999 ◽
Vol 17
(6)
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pp. 2630
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1997 ◽
Vol 175-176
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pp. 883-887
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2011 ◽
Vol 334
(1)
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pp. 113-117
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2000 ◽
Vol 208
(1-4)
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pp. 93-99
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1993 ◽
Vol 68
(2)
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pp. 203-207
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