Interferometry for end point prediction during plasma etching of various structures in complementary metal–oxide–semiconductor device fabrication

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591037 ◽

1999 ◽

Vol 17 (6) ◽

pp. 2630 ◽

Author(s):

N. Layadi ◽

S. J. Molloy ◽

T. C. Esry ◽

T. Lill ◽

J. Trevor ◽

...

Keyword(s):

Metal Oxide ◽

Plasma Etching ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Device Fabrication ◽

Oxide Semiconductor ◽

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Demonstration of Y1Ba2Cu3O7−δand complementary metal‐oxide‐semiconductor device fabrication on the same sapphire substrate

Applied Physics Letters ◽

10.1063/1.109758 ◽

1993 ◽

Vol 63 (9) ◽

pp. 1282-1284 ◽

Author(s):

M. J. Burns ◽

P. R. de la Houssaye ◽

S. D. Russell ◽

G. A. Garcia ◽

S. R. Clayton ◽

...

Keyword(s):

Metal Oxide ◽

Sapphire Substrate ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Device Fabrication ◽

Oxide Semiconductor

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Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application

Applied Physics Letters ◽

10.1063/1.4824422 ◽

2013 ◽

Vol 103 (15) ◽

pp. 153501 ◽

Author(s):

Kankat Ghosh ◽

Sudipta Das ◽

A. Fissel ◽

H. J. Osten ◽

Apurba Laha

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Next Generation ◽

Device Application

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High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2008.09.138 ◽

2009 ◽

Vol 311 (7) ◽

pp. 1962-1971 ◽

Author(s):

Donghun Choi ◽

James S. Harris ◽

Eunji Kim ◽

Paul C. McIntyre ◽

Joel Cagnon ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Device Fabrication ◽

Oxide Semiconductor ◽

High Quality ◽

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Adaptive Complementary Metal-Oxide-Semiconductor Device by Externally Controlled Gate Oxide Thickness

Journal of Computer Science ◽

10.3844/jcssp.2012.515.522 ◽

2012 ◽

Vol 8 (4) ◽

pp. 515-522

Author(s):

Valentina

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxide Thickness

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Quantitative two-dimensional carrier profiling of a 400 nm complementary metal–oxide–semiconductor device by Schottky scanning capacitance microscopy

Journal of Applied Physics ◽

10.1063/1.1322380 ◽

2000 ◽

Vol 88 (11) ◽

pp. 6752-6757 ◽

Author(s):

T. Tran ◽

J. N. Nxumalo ◽

Y. Li ◽

D. J. Thomson ◽

G. E. Bridges ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Scanning Capacitance Microscopy

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Phase State Analysis of Nickel Silicides in Complementary Metal–Oxide–Semiconductor Device Using Plasmon Energy Map

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.011203 ◽

2009 ◽

Vol 48 (1) ◽

pp. 011203 ◽

Author(s):

Shohei Terada ◽

Tatsumi Hirano ◽

Naoto Hashikawa ◽

Kyoichiro Asayama

Keyword(s):

Metal Oxide ◽

Phase State ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasmon Energy ◽

Nickel Silicides ◽

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An implantable and fully integrated complementary metal–oxide semiconductor device for in vivo neural imaging and electrical interfacing with the mouse hippocampus

Sensors and Actuators A Physical ◽

10.1016/j.sna.2007.11.020 ◽

2008 ◽

Vol 145-146 ◽

pp. 176-186 ◽

Author(s):

David C. Ng ◽

Hideki Tamura ◽

Taro Mizuno ◽

Takashi Tokuda ◽

Masahiro Nunoshita ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Integrated ◽

Neural Imaging ◽

Mouse Hippocampus

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A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary Metal–Oxide–Semiconductor Device Integration Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.101203 ◽

2012 ◽

Vol 51 ◽

pp. 101203 ◽

Author(s):

Seung Chan Heo ◽

Dongjun Yoo ◽

Moon Suk Choi ◽

Dohyung Kim ◽

Chulwon Chung ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Device Integration

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Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-$\kappa$/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dc08 ◽

2012 ◽

Vol 51 ◽

pp. 04DC08

Author(s):

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Metal Oxide ◽

Electrical Characteristic ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Inverter Circuit ◽

Characteristic Fluctuation

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Molecular-beam epitaxial growth of III–V semiconductors on Ge∕Si for metal-oxide-semiconductor device fabrication

Applied Physics Letters ◽

10.1063/1.2929386 ◽

2008 ◽

Vol 92 (20) ◽

pp. 203502 ◽

Author(s):

Donghun Choi ◽

Eunji Kim ◽

Paul C. McIntyre ◽

James S. Harris

Keyword(s):

Metal Oxide ◽

Epitaxial Growth ◽

Molecular Beam ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Device Fabrication ◽

Oxide Semiconductor ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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