Effects of quench rates on the short- and medium-range orders of amorphous silicon carbide: A molecular-dynamics study

2008 ◽  
Vol 104 (5) ◽  
pp. 053518 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi
2004 ◽  
Vol 449-452 ◽  
pp. 97-100
Author(s):  
Ju Young Kim ◽  
Baik Woo Lee ◽  
Ho Seok Nam ◽  
Dong Il Kwon

Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed.


2007 ◽  
Vol 102 (2) ◽  
pp. 023509 ◽  
Author(s):  
Izabela Szlufarska ◽  
Rajiv K. Kalia ◽  
Aiichiro Nakano ◽  
Priya Vashishta

2004 ◽  
Vol 70 (4) ◽  
Author(s):  
José P. Rino ◽  
Ingvar Ebbsjö ◽  
Paulo S. Branicio ◽  
Rajiv K. Kalia ◽  
Aiichiro Nakano ◽  
...  

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu

Author(s):  
P. Musumeci ◽  
L. Calcagno ◽  
A. Makhtari ◽  
P. Baeri ◽  
G. Compagnini ◽  
...  

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