The elastic properties of a nanoscale film of silicon carbide grown on a silicon substrate by atom substitution are studied. For the first time, the Young's modulus of nanoscale silicon carbide was measured by nanoindentation. Using optical profilometry and spectral ellipsometry, the structural characteristics of a silicon carbide film on silicon were studied, namely, the film roughness and its thickness were calculated.
The endotaxia is the process of growth of one crystal structure inside the volume of another. In this case we are talking about the formation of the Silicon Carbide film in the Silicon substrate. The Silicon substrate is placed in the gas chamber. The sample is exposed to the stream of methane gas CH4 at temperature of 1360 - 1380 ◦C and at normal pressure. Moreover, gas contains both the stable Carbon isotope C12 and the radioactive Carbon isotope C14, and hydrogen H2 in the gas acts as a carrier of Carbon.
In order to develop a quick and practical cleaning process for the silicon carbide chemical vapor deposition reactor, the pyrolytic carbon-coated susceptor was used. The 30-μm-thick silicon carbide film was formed on the susceptor; the film was cleaning by chlorine trifluoride gas at 460 °C for 15 min. The remained fluorine was removed by the annealing at 900 °C in ambient hydrogen. The pyrolytic carbon surface did not suffer from any damage, because the pyrolytic carbon film surface morphology after the cleaning process was the same as that before the silicon carbide film deposition.
Исследование упругих свойств пленок SiC, синтезированных на подложках Si методом замещения атомов
