Effects of gate insulator using high pressure annealing on the characteristics of solid phase crystallized polycrystalline silicon thin-film transistors

2009 ◽  
Vol 105 (7) ◽  
pp. 074507 ◽  
Author(s):  
Moojin Kim ◽  
GuangHai Jin
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Gate Insulator ◽  
Silicon Thin Film

Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors

2012 ◽  
Vol 33 (10) ◽  
pp. 1414-1416 ◽  
Author(s):  
Wei Zhou ◽  
Zhiguo Meng ◽  
Shuyun Zhao ◽  
Meng Zhang ◽  
Rongsheng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Silicon Thin Film

Improvement in Characteristics of Polycrystalline Silicon Thin-Film Transistors by Heating with High-Pressure H 2O Vapor

1998 ◽  
Vol 37 (Part 2, No. 9A/B) ◽  
pp. L1030-L1032 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Mitsuru Satoh ◽  
Keiji Sakamoto ◽  
Kentaro Ozaki ◽  
Keiko Saitoh
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

P.5: High Uniformity Solid Phase Crystallized Bridged-Grain Polycrystalline Silicon Thin Film Transistors

2013 ◽  
Vol 44 (1) ◽  
pp. 1003-1006
Author(s):  
Wei Zhou ◽  
Rongsheng Chen ◽  
Shuyun Zhao ◽  
Meng Zhang ◽  
Man Wong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Silicon Thin Film ◽  
High Uniformity

Effects of Hydrogen Plasma Treatment on Hysteresis Phenomenon and Electrical Properties for Solid Phase Crystallized Silicon Thin Film Transistors

2009 ◽  
Vol 1153 ◽  
Author(s):  
Sung-Hwan Choi ◽  
Sang-Geun Park ◽  
Chang-Yeon Kim ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Hydrogen Plasma ◽  
Gate Insulator ◽  
Hysteresis Phenomenon ◽  
Silicon Thin Film ◽  
Time Duration

AbstractWe have investigated the effects of hydrogen plasma treatment on the hysteresis phenomenon and electrical properties of solid phase crystallized silicon thin film transistors (SPC-Si TFTs) employing alternating magnetic field crystallization (AMFC). We employed H2 plasma treatment on the SPC-Si active layer before SiO2 gate insulator deposition. By increasng the power and time duration of H2 plasma treatment, it was observed that hysteresis phenomenon of SPC-Si TFT was suppressed and electrical properties such as threshold voltage, field effect mobility was improved considerably. This is due to role of hydrogen atom by passivating the defects and grain boundary trap states in SPC-Si film. However, relatively high power and long hydrogen plasma treatment (100W, 5 minutes) could degrade the electrical characteristics of the device. SPC-Si TFT for 100W power of PECVD and 3 minutes with the H2 plasma treatment exhibit the significant improvement of electrical characterics (VTH = - 3.85V, μFE = 21.16cm2/Vs), and a smaller hysteresis phenomenon (∆VTH = -0.30V) which is suitable for high quality AMOLED Display.

High-Performance Solid-Phase Crystallized Polycrystalline Silicon Thin-Film Transistors with Floating-Channel Structure

2008 ◽  
Vol 47 (4) ◽  
pp. 3024-3027
Author(s):  
Chia-Wen Chang ◽  
Chih-Kang Deng ◽  
Che-Lun Chang ◽  
Ta-Chuan Liao ◽  
Tan-Fu Lei
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Solid Phase ◽  
Channel Structure ◽  
Silicon Thin Film
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