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Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks
Applied Physics Letters
◽
10.1063/1.3173814
◽
2009
◽
Vol 95
(1)
◽
pp. 012906
◽
Cited By ~ 34
Author(s):
L. Lin
◽
J. Robertson
Keyword(s):
Flat Band
◽
Flat Band Voltage
◽
Gate Stacks
◽
Atomic Mechanism
Download Full-text
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Atomic mechanism of Flat band voltage shifts by Oxide dipole Layers in High K-Metal Gate Stacks
10.7567/ssdm.2010.b-3-1
◽
2010
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Author(s):
J. Robertson
◽
L. Lin
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Atomic Mechanism
◽
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(Invited) Study on Impact of MOS Interface Passivation Processes on Band Alignment and Flat-Band Voltage of 4H-SiC Gate Stacks
ECS Meeting Abstracts
◽
10.1149/ma2021-0230940mtgabs
◽
2021
◽
Vol MA2021-02
(30)
◽
pp. 940-940
Author(s):
Koji Kita
Keyword(s):
Band Alignment
◽
Flat Band
◽
Flat Band Voltage
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◽
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The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
◽
10.1109/essderc.2011.6044230
◽
2011
◽
Cited By ~ 1
Author(s):
BeomYong Kim
◽
YunHyuck Ji
◽
SeungMi Lee
◽
BongSeok Jeon
◽
KeeJeung Lee
◽
...
Keyword(s):
Ion Implantation
◽
Flat Band
◽
Flat Band Voltage
◽
Gate Stacks
◽
Voltage Shift
◽
High K
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Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers
Microelectronic Engineering
◽
10.1016/j.mee.2009.03.012
◽
2009
◽
Vol 86
(7-9)
◽
pp. 1743-1746
◽
Cited By ~ 20
Author(s):
L. Lin
◽
J. Robertson
Keyword(s):
Flat Band
◽
Flat Band Voltage
◽
Atomic Mechanism
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Origin of the flat-band voltage (Vfb) roll-off phenomenon in metal/high-k gate stacks
ESSDERC 2008 - 38th European Solid-State Device Research Conference
◽
10.1109/essderc.2008.4681717
◽
2008
◽
Cited By ~ 1
Author(s):
G. Bersuker
◽
C. S. Park
◽
H. C. Wen
◽
K. Choi
◽
O. Sharia
◽
...
Keyword(s):
Flat Band
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Nature of Interface Traps in Si/SiO2/HfO2 /TiN Gate Stacks and its Correlation with the Flat-band Voltage Roll-off
ECS Transactions
◽
10.1149/1.3206639
◽
2019
◽
Vol 25
(6)
◽
pp. 399-408
◽
Cited By ~ 4
Author(s):
S. Kar
Keyword(s):
Flat Band
◽
Interface Traps
◽
Flat Band Voltage
◽
Gate Stacks
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(Invited) Study on Impact of MOS Interface Passivation Processes on Band Alignment and Flat-Band Voltage of 4H-SiC Gate Stacks
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◽
10.1149/10404.0193ecst
◽
2021
◽
Vol 104
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◽
pp. 193-199
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Band Alignment
◽
Flat Band
◽
Flat Band Voltage
◽
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◽
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Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature
Applied Physics Express
◽
10.35848/1882-0786/abc516
◽
2020
◽
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◽
pp. 111006
Author(s):
Li-Chuan Sun
◽
Chih-Yang Lin
◽
Po-Hsun Chen
◽
Tsung-Ming Tsai
◽
Kuan-Ju Zhou
◽
...
Keyword(s):
Low Temperature
◽
Trap Density
◽
Flat Band
◽
Interface Trap Density
◽
Interface Trap
◽
Flat Band Voltage
◽
Voltage Shift
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New method of determination of the flat-band voltage in SOI MOS structures
Solid-State Electronics
◽
10.1016/0038-1101(86)90019-5
◽
1986
◽
Vol 29
(9)
◽
pp. 947-950
◽
Cited By ~ 6
Author(s):
Krzysztof Iniewski
◽
Andrzej Jakubowski
Keyword(s):
New Method
◽
Flat Band
◽
Flat Band Voltage
◽
Method Of Determination
◽
Mos Structures
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Flat-band voltage of a-Si pin solar cells from spectral characteristics
10.1109/pvsc.1988.105684
◽
1988
◽
Cited By ~ 1
Author(s):
H. Pfleiderer
◽
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◽
E. Gunzel
◽
J. Grabmaier
Keyword(s):
Solar Cells
◽
Spectral Characteristics
◽
Flat Band
◽
Flat Band Voltage
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