Atomic mechanism of Flat band voltage shifts by Oxide dipole Layers in High K-Metal Gate Stacks

Mapping Intimacies ◽

10.7567/ssdm.2010.b-3-1 ◽

2010 ◽

Author(s):

J. Robertson ◽

L. Lin

Keyword(s):

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

Atomic Mechanism ◽

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Atomic mechanism of flat-band voltage shifts by La2O3 and Al2O3 in gate stacks

Applied Physics Letters ◽

10.1063/1.3173814 ◽

2009 ◽

Vol 95 (1) ◽

pp. 012906 ◽

Author(s):

L. Lin ◽

J. Robertson

Keyword(s):

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

Atomic Mechanism

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The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2011.6044230 ◽

2011 ◽

Author(s):

BeomYong Kim ◽

YunHyuck Ji ◽

SeungMi Lee ◽

BongSeok Jeon ◽

KeeJeung Lee ◽

...

Keyword(s):

Ion Implantation ◽

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

Voltage Shift ◽

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Flat-band voltage shift in metal-gate/high- k /Si stacks

Chinese Physics B ◽

10.1088/1674-1056/20/9/097303 ◽

2011 ◽

Vol 20 (9) ◽

pp. 097303 ◽

Author(s):

An-Ping Huang ◽

Xiao-Hu Zheng ◽

Zhi-Song Xiao ◽

Zhi-Chao Yang ◽

Mei Wang ◽

...

Keyword(s):

Flat Band ◽

Flat Band Voltage ◽

Voltage Shift ◽

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Origin of the flat-band voltage (Vfb) roll-off phenomenon in metal/high-k gate stacks

ESSDERC 2008 - 38th European Solid-State Device Research Conference ◽

10.1109/essderc.2008.4681717 ◽

2008 ◽

Author(s):

G. Bersuker ◽

C. S. Park ◽

H. C. Wen ◽

K. Choi ◽

O. Sharia ◽

...

Keyword(s):

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

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Novel Exploration of Flat-Band Voltage Manipulation by NPT for Advanced High-k/Metal-Gate CMOS Technology

ECS Meeting Abstracts ◽

10.1149/ma2019-01/23/1174 ◽

2019 ◽

Keyword(s):

Cmos Technology ◽

Flat Band ◽

Flat Band Voltage ◽

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Novel Exploration of Flat-Band Voltage Manipulation by Nitrogen Plasma Treatment for Advanced High-k/Metal-Gate CMOS Technology

ECS Transactions ◽

10.1149/08903.0055ecst ◽

2019 ◽

Vol 89 (3) ◽

pp. 55-59

Author(s):

Jiaxin Yao ◽

Zhaozhao Hou ◽

Zhenhua Wu ◽

Huaxiang Yin

Keyword(s):

Plasma Treatment ◽

Cmos Technology ◽

Nitrogen Plasma ◽

Flat Band ◽

Flat Band Voltage ◽

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Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

Applied Physics Letters ◽

10.1063/1.3491292 ◽

2010 ◽

Vol 97 (13) ◽

pp. 132908 ◽

Author(s):

X. H. Zheng ◽

A. P. Huang ◽

Z. S. Xiao ◽

Z. C. Yang ◽

M. Wang ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

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Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ pMOSFETs With High-$k$/Metal Gate Stacks

IEEE Electron Device Letters ◽

10.1109/led.2010.2071851 ◽

2010 ◽

Author(s):

Won-Ho Choi ◽

Chang-Young Kang ◽

Jung-Woo Oh ◽

Byoung-Hun Lee ◽

Prashant Majhi ◽

...

Keyword(s):

High Performance ◽

Negative Bias ◽

Gate Stacks ◽

Hot Carrier ◽

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(Invited) Study on Impact of MOS Interface Passivation Processes on Band Alignment and Flat-Band Voltage of 4H-SiC Gate Stacks

ECS Meeting Abstracts ◽

10.1149/ma2021-0230940mtgabs ◽

2021 ◽

Vol MA2021-02 (30) ◽

pp. 940-940

Author(s):

Koji Kita

Keyword(s):

Band Alignment ◽

Flat Band ◽

Flat Band Voltage ◽

Gate Stacks ◽

Interface Passivation

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Study on the Effect of Plasma Treatment on Flat-band-voltage and Equivalent Oxide Thickness using Metal-organic Chemical Vapor Deposition TiN Film as p-MOSFETS Metal Gate Electrode

Journal of Nanomedicine & Nanotechnology ◽

10.4172/2157-7439.s7-005 ◽

2015 ◽

Vol 01 (s7) ◽

Author(s):

Jianfeng Gao ◽

Hong Yang

Keyword(s):

Chemical Vapor ◽

Oxide Thickness ◽

Flat Band ◽

Organic Chemical ◽

Flat Band Voltage ◽

Equivalent Oxide Thickness ◽

Tin Film ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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