The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks

2011 ◽  
Author(s):  
BeomYong Kim ◽  
YunHyuck Ji ◽  
SeungMi Lee ◽  
BongSeok Jeon ◽  
KeeJeung Lee ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Gate Stacks ◽  
Voltage Shift ◽  
High K

Flat-band voltage shift in metal-gate/high- k /Si stacks

2011 ◽  
Vol 20 (9) ◽  
pp. 097303 ◽  
Author(s):  
An-Ping Huang ◽  
Xiao-Hu Zheng ◽  
Zhi-Song Xiao ◽  
Zhi-Chao Yang ◽  
Mei Wang ◽  
...  
Keyword(s):  
Flat Band ◽  
Flat Band Voltage ◽  
Metal Gate ◽  
Voltage Shift ◽  
High K

Re-examination of Flat-Band Voltage Shift for High-k MOS Devices

2007 ◽  
Author(s):  
K. Iwamoto ◽  
A. Ogawa ◽  
Y. Kamimuta ◽  
Y. Watanabe ◽  
W. Mizubayashi ◽  
...  
Keyword(s):  
Flat Band ◽  
Flat Band Voltage ◽  
Voltage Shift ◽  
Mos Devices ◽  
High K

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

scholarly journals Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Sung Heo ◽  
Hyoungsun Park ◽  
Dong-Su Ko ◽  
Yong Su Kim ◽  
Yong Koo Kyoung ◽  
...  
Keyword(s):  
Work Function ◽  
Direct Evidence ◽  
Depth Profiling ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Voltage Shift
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