Thermal oxidation and electrical properties of silicon carbide metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.353270 ◽

1993 ◽

Vol 73 (3) ◽

pp. 1279-1283 ◽

Author(s):

N. Singh ◽

A. Rys

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Thermal Oxidation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

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Modeling of Irradiation-Induced Changes in the Electrical Properties of Metal-Oxide-Semiconductor Structures

Advances in Electronics and Electron Physics Volume 58 - Advances in Electronics and Electron Physics ◽

10.1016/s0065-2539(08)61021-5 ◽

1982 ◽

pp. 1-79 ◽

Author(s):

J.N. Churchill ◽

F.E. Holmstrom ◽

T.W. Collins

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Induced Changes

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Some electrical properties of the GaAs-anodic oxide interface on the basis of measurements of the capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures

Thin Solid Films ◽

10.1016/0040-6090(88)90675-x ◽

1988 ◽

Vol 165 (1) ◽

pp. 21-28

Author(s):

St. Łos̀ ◽

St. Kochowski

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Anodic Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Interface ◽

Semiconductor Structures ◽

Capacitance Voltage

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Electrical properties of β‐SiC metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.347582 ◽

1991 ◽

Vol 69 (10) ◽

pp. 7319-7321 ◽

Author(s):

M. I. Chaudhry

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c087 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C087 ◽

Author(s):

Mitsuo Okamoto ◽

Tsutomu Yatsuo ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Simulations of quantized inversion layer electron transport in 6H–Silicon carbide metal oxide semiconductor structures

Applied Physics Letters ◽

10.1063/1.121307 ◽

1998 ◽

Vol 72 (17) ◽

pp. 2156-2158 ◽

Author(s):

R. P. Joshi

Keyword(s):

Silicon Carbide ◽

Electron Transport ◽

Metal Oxide ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Interfacial Electronic Structures of Amorphous Al2O3/ZnO Correlated with Electrical Properties of Al/Al2O3/ZnO Metal-Oxide-Semiconductor Structures

e-Journal of Surface Science and Nanotechnology ◽

10.1380/ejssnt.2012.165 ◽

2012 ◽

Vol 10 (0) ◽

pp. 165-168 ◽

Author(s):

J. W. Liu ◽

A. Kobayashi ◽

K. Ueno ◽

J. Ohta ◽

H. Fujioka ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Electronic Structures ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides

Journal of Applied Physics ◽

10.1063/1.2888537 ◽

2008 ◽

Vol 103 (6) ◽

pp. 064515 ◽

Author(s):

E. Kapetanakis ◽

P. Normand ◽

P. Holliger

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Semiconductor Structures

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Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/19/9/097106 ◽

2010 ◽

Vol 19 (9) ◽

pp. 097106

Author(s):

Wang Shou-Guo ◽

Zhang Yi-Men ◽

Zhang Yu-Ming

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Parameter Analysis ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

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Electrical properties of 1 MeV helium implanted metal- oxide-semiconductor structures

phys stat sol (a) ◽

10.1002/pssa.2210950143 ◽

1986 ◽

Vol 95 (1) ◽

pp. 343-351 ◽

Author(s):

W. R. Fahrner ◽

C. P. Schneider ◽

E. F. Gorey

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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