Measurement of the hot electron attenuation length of copper

2010 ◽  
Vol 96 (6) ◽  
pp. 062105 ◽  
Author(s):  
J. J. Garramone ◽  
J. R. Abel ◽  
I. L. Sitnitsky ◽  
L. Zhao ◽  
I. Appelbaum ◽  
...  
2010 ◽  
Vol 96 (26) ◽  
pp. 269901
Author(s):  
J. J. Garramone ◽  
J. R. Abel ◽  
I. L. Sitnitsky ◽  
L. Zhao ◽  
I. Appelbaum ◽  
...  

1979 ◽  
Vol 16 (5) ◽  
pp. 1394-1397 ◽  
Author(s):  
J. S. Escher ◽  
P. E. Gregory ◽  
T. J. Maloney

1975 ◽  
Vol 26 (1) ◽  
pp. 157-164 ◽  
Author(s):  
D.P. Oxley ◽  
R.E. Thurstans

1993 ◽  
Vol 320 ◽  
Author(s):  
Bruce R. Turner ◽  
L. J. Schowalter ◽  
E. Y. Lee ◽  
J. R. Jimenez

ABSTRACTThe PtSi/Si interface is of technological interest for Schottky barrier infrared detectors. We are studying PtSi/Si heterostructures using ballistic -electron-emission microscopy (BEEM), an STM-based technique that uses the STM tip to inject hot electrons at a particular energy into the metal overlayer. The BEEM technique allows imaging of the Schottky barrier with good spatial resolution (of the order of tens of nanometers) and allows the measurement of the hot electron attenuation length in the metal overlayer. Our results indicate a Schottky barrier of 0.87 eV for PtSi/Si n-type, and an attenuation length of 4 nm for electrons with an energy of 1 eV above the metal Fermi level. The attenuation length we measure is a convolution of the electron elastic and inelastic mean free path lengths.We have also used an ac BEEM technique to observe inelastic scattering events at the metalsemiconductor interface in PtSi/Si(100) n-type. There are several features visible in the spectrum, including one at 1040 meV which we attribute to optical phonon-assisted electron-hole pair creation near the metal- semiconductor interface in analogy to a feature we have observed at the same energy in the Au/Si(100) ac BEEM spectrum. Higher-energy features appear at 1230 meV and 1300 meV. Similar features appeared in the Au/Si(100) spectrum at 1120 meV and 1230 meV.We also suggest that the traditional assumption of momentum conservation parallel to the Schottky barrier interface is unnecessary to obtain a quadratic turn on of the BEEM current above the threshold. If electrons are elastically scattered at the interface so that momentum is not conserved, the increase in the ratio of the density of states in the semiconductor to those in the metal will also give a quadratic turn on even when the band structure is much more complicated than a nearly free electron model. This model also explains why the simple square-root dependence of the photoresponse on wavelength above threshold observed in all metal/semiconductor Schottky barriers despite the complications in band structure.


1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-233-Pr3-236
Author(s):  
M. Frericks ◽  
H. F.C. Hoevers ◽  
P. de Groene ◽  
W. A. Mels ◽  
P. A.J. de Korte

Author(s):  
Theodoros Tsoulos ◽  
Supriya Atta ◽  
Maureen Lagos ◽  
Michael Beetz ◽  
Philip Batson ◽  
...  

<div>Gold nanostars display exceptional field enhancement properties and tunable resonant modes that can be leveraged to create effective imaging tags or phototherapeutic agents, or to design novel hot-electron based photocatalysts. From a fundamental standpoint, they represent important tunable platforms to study the dependence of hot carrier energy and dynamics on plasmon band intensity and position. Toward the realization of these platforms, holistic approaches taking into account both theory and experiments to study the fundamental behavior of these</div><div>particles are needed. Arguably, the intrinsic difficulties underlying this goal stem from the inability to rationally design and effectively synthesize nanoparticles that are sufficiently monodispersed to be employed for corroborations of the theoretical results without the need of single particle experiments. Herein, we report on our concerted computational and experimental effort to design, synthesize, and explain the origin and morphology-dependence of the plasmon modes of a novel gold nanostar system, with an approach that builds upon the well-known plasmon hybridization model. We have synthesized monodispersed samples of gold nanostars with finely tunable morphology employing seed-mediated colloidal protocols, and experimentally observed narrow and spectrally resolved harmonics of the primary surface plasmon resonance mode both at the single particle level (via electron energy loss spectroscopy) and in ensemble (by UV-Vis and ATR-FTIR spectroscopies). Computational results on complex anisotropic gold nanostructures are validated experimentally on samples prepared colloidally, underscoring their importance as ideal testbeds for the study of structure-property relationships in colloidal nanostructures of high structural complexity.</div>


Author(s):  
Jim Vickers ◽  
Nader Pakdaman ◽  
Steven Kasapi

Abstract Dynamic hot-electron emission using time-resolved photon counting can address the long-term failure analysis and debug requirements of the semiconductor industry's advanced devices. This article identifies the detector performance parameters and components that are required to scale and keep pace with the industry's requirements. It addresses the scalability of dynamic emission with the semiconductor advanced device roadmap. It is important to understand the limitations to determining that a switching event has occurred. The article explains the criteria for event detection, which is suitable for tracking signal propagation and looking for logic or other faults in which timing is not critical. It discusses conditions for event timing, whose goal is to determine accurately when a switching event has occurred, usually for speed path analysis. One of the uses of a dynamic emission system is to identify faults by studying the emission as a general function of time.


2020 ◽  
Vol 131 (3) ◽  
pp. 456-459
Author(s):  
S. S. Abukari ◽  
R. Musah ◽  
M. Amekpewu ◽  
S. Y. Mensah ◽  
N. G. Mensah ◽  
...  

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