Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
Keyword(s):
Keyword(s):
2016 ◽
Vol 55
(2S)
◽
pp. 02BC17
◽
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
2020 ◽
Vol 67
(4)
◽
pp. 1606-1612
◽
Keyword(s):