High‐quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low‐pressure metalorganic chemical vapor deposition
1984 ◽
Vol 23
(Part 2, No. 6)
◽
pp. L424-L426
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2000 ◽
Vol 221
(1-4)
◽
pp. 388-392
◽
1994 ◽
Vol 145
(1-4)
◽
pp. 82-86
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