The effect of various buffer‐layer structures on the material quality and dislocation density of high composition AlxGa1−xAs laser material grown by metalorganic chemical vapor deposition
1999 ◽
Vol 4
(S1)
◽
pp. 634-641
◽
2014 ◽
Vol 32
(5)
◽
pp. 051207
◽
InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition
2012 ◽
Vol 51
(8R)
◽
pp. 080201
◽
2016 ◽
2006 ◽
Vol 45
(No. 8)
◽
pp. L236-L238
◽
2000 ◽
Vol 39
(Part 1, No. 5A)
◽
pp. 2508-2511