scholarly journals Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

2010 ◽  
Vol 97 (7) ◽  
pp. 072105 ◽  
Author(s):  
M. Bär ◽  
M. Wimmer ◽  
R. G. Wilks ◽  
M. Roczen ◽  
D. Gerlach ◽  
...  
1994 ◽  
Vol 34 (1-4) ◽  
pp. 285-289 ◽  
Author(s):  
Takao Matsuyama ◽  
Toshiaki Baba ◽  
Tsuyoshi Takahama ◽  
Shinya Tsuda ◽  
Shoichi Nakano

2015 ◽  
Vol 119 (19) ◽  
pp. 10412-10416 ◽  
Author(s):  
D. Hauschild ◽  
F. Meyer ◽  
A. Benkert ◽  
D. Kreikemeyer-Lorenzo ◽  
S. Pohlner ◽  
...  

2012 ◽  
Vol 24 (11) ◽  
pp. 2751-2756
Author(s):  
张超 Zhang Chao ◽  
张庆茂 Zhang Qingmao ◽  
郭亮 Guo Liang ◽  
吕启涛 Lü Qitao ◽  
吴煜文 Wu Yuwen

2013 ◽  
Vol 529 ◽  
pp. 50-53 ◽  
Author(s):  
Yang-Shih Lin ◽  
Shui-Yang Lien ◽  
Yung-Chuan Huang ◽  
Chao-Chun Wang ◽  
Chueh-Yang Liu ◽  
...  

2011 ◽  
Vol 4 (7) ◽  
pp. 074101 ◽  
Author(s):  
Feng Jiang ◽  
Honglie Shen ◽  
Wei Wang ◽  
Lei Zhang

2010 ◽  
Vol 44-47 ◽  
pp. 4151-4153 ◽  
Author(s):  
Rui Min Jin ◽  
Ding Zhen Li ◽  
Lan Li Chen ◽  
Xiang Ju Han ◽  
Jing Xiao Lu

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing (RTA) at the same temperature for different time. From X-ray diffraction (XRD) and scanning electronic microscope (SEM), it is found that the grain size is biggest crystallized at 720°C for 8 min, an average grain size of 28nm or so is obtained. The thin film is smoothly and perfect structure.


2014 ◽  
Vol 63 (7) ◽  
pp. 077301
Author(s):  
Chen Pei-Zhuan ◽  
Hou Guo-Fu ◽  
Suo Song ◽  
Ni Jian ◽  
Zhang Jian-Jun ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document