Optical properties of surface modified polypropylene by plasma immersion ion implantation technique

2010 ◽  
Vol 97 (8) ◽  
pp. 081908 ◽  
Author(s):  
Sk. Faruque Ahmed ◽  
Myoung-Woon Moon ◽  
Chansoo Kim ◽  
Yong-Jun Jang ◽  
Seonghee Han ◽  
...  
1999 ◽  
Vol 262 (1-2) ◽  
pp. 289-299 ◽  
Author(s):  
Gerard W. Malaczynski ◽  
Chi H. Leung ◽  
Alaa A. Elmoursi ◽  
Aboud H. Hamdi ◽  
Albert B. Campbell ◽  
...  

2017 ◽  
Vol 135 (11) ◽  
pp. 45983 ◽  
Author(s):  
Ilya A. Morozov ◽  
Alexander S. Mamaev ◽  
Irina V. Osorgina ◽  
Anton Y. Beliaev ◽  
Roman I. Izumov ◽  
...  

1996 ◽  
Vol 05 (02) ◽  
pp. 285-330 ◽  
Author(s):  
P. MAZZOLDI ◽  
G.W. ARNOLD ◽  
G. BATTAGLIN ◽  
F. GONELLA ◽  
R.F. HAGLUND

Implantation of metal ions (e.g., silver, copper, gold, lead) in glass substrates leads under certain circumstances to the formation of nanometer-radius colloidal particles in a thin surface layer. These particles exhibit an electron plasmon resonance which depends on the optical constants of the implanted metal and on the refractive index of the glass host. The nonlinear optical properties of such colloids, in particular the enhancement of optical Kerr susceptibility by both dielectric and quantum-confinement effects, suggest that the ion implantation technique may play an important role for the production of all-optical switching devices. A review of the state-of-the-art of the research in this field will be presented from the perspective of the nonlinear optical properties of ion-implanted glasses.


1996 ◽  
Vol 452 ◽  
Author(s):  
Z. Fan ◽  
Paul K. Chu ◽  
X. Lu ◽  
S. S. K. Iyer ◽  
N. W. Cheung

AbstractPlasma Immersion Ion Implantation (PIII) excels in several areas over conventional ion implantation, for example, higher dose, shorter implantation time, and lower overall cost. The technique can be used to fabricate buried porous silicon. In our experiment, hydrogen is implanted into Si by PIII at 5–30kV to form underlying porous silicon (PS) which emits light at an energy higher than the Si bandgap. The optical properties of the PS samples as measured by photoluminescence are quite good. The PHI technique therefore offers an alternative means to fabricate buried porous silicon structures which can potentially be used to fabricate optoelectronic devices in silicon.


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