Temperature-dependent degradation mechanisms of threshold voltage in La2O3-gated n-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3482057 ◽

2010 ◽

Vol 108 (6) ◽

pp. 064111 ◽

Author(s):

Ming-Tsong Wang ◽

De-Cheng Hsu ◽

Pi-Chun Juan ◽

Y. L. Wang ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Temperature Dependent

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Temperature-dependent degradation mechanisms of channel mobility in ZrO2-gated n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2211307 ◽

2006 ◽

Vol 88 (24) ◽

pp. 242905 ◽

Author(s):

Ming-Tsong Wang ◽

Bonds Yi-Yi Cheng ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Temperature Dependent ◽

Channel Mobility

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Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.5.041302 ◽

2012 ◽

Vol 5 (4) ◽

pp. 041302 ◽

Author(s):

Mitsuo Okamoto ◽

Youichi Makifuchi ◽

Miwako Iijima ◽

Yoshiyuki Sakai ◽

Noriyuki Iwamuro ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Voltage Instability

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Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.08jc02 ◽

2010 ◽

Vol 49 (8) ◽

pp. 08JC02 ◽

Author(s):

Koji Eriguchi ◽

Yoshinori Nakakubo ◽

Asahiko Matsuda ◽

Masayuki Kamei ◽

Yoshinori Takao ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasma Process ◽

Voltage Instability ◽

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Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

Applied Physics Letters ◽

10.1063/1.3549178 ◽

2011 ◽

Vol 98 (5) ◽

pp. 053501 ◽

Author(s):

Anri Nakajima ◽

Takashi Kudo ◽

Takashi Ito

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Power Operation ◽

Ultralow Power ◽

Tunnel Injection ◽

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Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowire n-type metal-oxide-semiconductor field-effect transistors

Journal of Computational Electronics ◽

10.1007/s10825-020-01572-9 ◽

2020 ◽

Vol 19 (4) ◽

pp. 1478-1484

Author(s):

Wen-Li Sung ◽

Yiming Li

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Random Number ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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On resolving hot carrier induced degradation mechanisms in silicon‐on‐sapphire metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.110646 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1912-1914 ◽

Author(s):

E. Y. Chao ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

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Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4822158 ◽

2013 ◽

Vol 114 (12) ◽

pp. 124505 ◽

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Wen-Hung Lo ◽

Szu-Han Ho ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Hot Carrier ◽

Hot Carrier Stress

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Effects of Si/Ni Composition Ratio of NixSiyGate Electrode and Hf/Si Composition Ratio of Hf-Based High-kInsulator on Threshold Voltage Controllability and Mobility of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.036504 ◽

2010 ◽

Vol 49 (3) ◽

pp. 036504

Author(s):

Masayuki Terai ◽

Takashi Hase ◽

Kentaro Shibahara ◽

Hirohito Watanabe

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Composition Ratio

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Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l978 ◽

1995 ◽

Vol 34 (Part 2, No. 8A) ◽

pp. L978-L980

Author(s):

Chii-Wen Chen ◽

Yean-Kuen Fang ◽

Gun-Yuan Lee ◽

Jang-Cheng Hsieh ◽

MongSongLiang ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Current Voltage ◽

Current Voltage Characteristics

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Tunneling‐injection‐induced turnaround behavior of threshold voltage in thermally nitrided oxiden‐channel metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.346872 ◽

1990 ◽

Vol 68 (12) ◽

pp. 6299-6303 ◽

Author(s):

Z. J. Ma ◽

P. T. Lai ◽

Z. H. Liu ◽

S. Fleischer ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunneling Injection

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