Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors

2010 ◽  
Vol 49 (8) ◽  
pp. 08JC02 ◽  
Author(s):  
Koji Eriguchi ◽  
Yoshinori Nakakubo ◽  
Asahiko Matsuda ◽  
Masayuki Kamei ◽  
Yoshinori Takao ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Plasma Process ◽  
Voltage Instability ◽  
Process Damage

Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

2007 ◽  
Vol 90 (14) ◽  
pp. 143502 ◽  
Author(s):  
C. Z. Zhao ◽  
M. B. Zahid ◽  
J. F. Zhang ◽  
G. Groeseneken ◽  
R. Degraeve ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Instability

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

2019 ◽  
Vol 216 (24) ◽  
pp. 1900538 ◽  
Author(s):  
Mingchao Yang ◽  
Liwen Sang ◽  
Meiyong Liao ◽  
Masataka Imura ◽  
Hongdong Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Voltage Instability
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