2–3 μm mid infrared light sources using InGaAs/GaAsSb “W” type quantum wells on InP substrates

2010 ◽  
Vol 108 (10) ◽  
pp. 103105 ◽  
Author(s):  
C. H. Pan ◽  
S. D. Lin ◽  
C. P. Lee
1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-161
Author(s):  
F. H. Julien ◽  
P. Boucaud ◽  
S. Sauvage ◽  
O. Gauthier-Lafaye ◽  
Z. Moussa

2012 ◽  
Vol 18 (1) ◽  
pp. 531-540 ◽  
Author(s):  
Jens Biegert ◽  
Philip K. Bates ◽  
Olivier Chalus

2019 ◽  
Vol 25 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Aditya Malik ◽  
Alexander Spott ◽  
Eric J. Stanton ◽  
Jonathan D. Peters ◽  
Jeremy Daniel Kirch ◽  
...  

2021 ◽  
Vol 14 (3) ◽  
pp. 032008
Author(s):  
Hisashi Sumikura ◽  
Tomonari Sato ◽  
Akihiko Shinya ◽  
Masaya Notomi

2007 ◽  
Vol 06 (03n04) ◽  
pp. 241-244 ◽  
Author(s):  
D. A. FIRSOV ◽  
L. E. VOROBJEV ◽  
M. A. BARZILOVICH ◽  
V. YU. PANEVIN ◽  
I. V. MIKHAYLOV ◽  
...  

Optical phenomena in quantum dot and quantum well nanostructures aimed at the development of mid-infrared lasers based on intraband electron transitions are investigated in the conditions of interband optical pumping. Evolution of photoluminescence spectra and interband light absorption with intensity of interband optical excitation is investigated in InAs / GaAs quantum dot structures. Optically induced intersubband mid-infrared light absorption is studied in undoped tunnel-coupled GaAs / AlGaAs quantum wells. The stabilization of the electron concentration at the ground level of tunnel-coupled quantum wells under increasing pumping level is established.


Author(s):  
Tun Cao ◽  
Meng Lian ◽  
Xianchao Lou ◽  
Kuan Liu ◽  
Yaoming Guo ◽  
...  

Abstract Efficient thermal radiation in the mid-infrared (M-IR) region is of supreme importance for many applications including thermal imaging and sensing, thermal infrared light sources, infrared spectroscopy, emissivity coatings, and camouflage. The capability of controlling light makes metasurface an attractive platform for infrared applications. Recently, different metamaterials have been proposed to achieve high thermal radiation. To date, broadening of the radiation bandwidth of metasurface emitter (meta-emitter) has become a key goal to enable extensive applications. We experimentally demonstrate a broadband M-IR thermal emitter using stacked nanocavity metasurface consisting of two pairs of circular-shaped dielectric (Si3N4) – metal (Au) stacks. A high thermal radiation can be obtained by engineering the geometry of nanocavity metasurface. Such a meta-emitter provides wideband and broad angular absorptance of both p- and s-polarized light, offering a wideband thermal radiation with an average emissivity of more than 80% in the M-IR atmospheric window of 8–14 μm. The experimental illustration together with theoretical framework places a basis for designing broadband thermal emitters, which, as anticipated, will initiate a promising avenue to M-IR source.


Author(s):  
William M. J. Green ◽  
Bart Kuyken ◽  
Xiaoping Liu ◽  
Richard M. Osgood ◽  
Roel Baets ◽  
...  

2004 ◽  
Author(s):  
Regine Glatthaar ◽  
Joachim Nurnus ◽  
Uwe Vetter ◽  
Dirk Szewczyk ◽  
Armin Lambrecht ◽  
...  

2020 ◽  
Vol 28 (15) ◽  
pp. 21522 ◽  
Author(s):  
Jing Ren ◽  
Xiaosong Lu ◽  
Changgui Lin ◽  
R. K. Jain

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