Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

2012 ◽  
Vol 12 ◽  
pp. S10-S19 ◽  
Author(s):  
Heiji Watanabe ◽  
Katsuhiro Kutsuki ◽  
Atsushi Kasuya ◽  
Iori Hideshima ◽  
Gaku Okamoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
High Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stack ◽  
Plasma Nitridation

In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

2019 ◽  
Vol 11 (4) ◽  
pp. 431-439 ◽  
Author(s):  
Rama Kambhampati ◽  
Sergei Koveshnikov ◽  
Vadim Tokranov ◽  
M. Yakimov ◽  
R Moore ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Gate Stack ◽  
In Situ Deposition ◽  
High K

scholarly journals Research progress of high mobility germanium based metal oxide semiconductor devices

2015 ◽  
Vol 64 (20) ◽  
pp. 208501
Author(s):  
An Xia ◽  
Huang Ru ◽  
Li Zhi-Qiang ◽  
Yun Quan-Xin ◽  
Lin Meng ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
High Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Research Progress
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