Raman and emission characteristics of a-plane InGaN/GaN blue-green light emitting diodes on r-sapphire substrates

2011 ◽  
Vol 109 (4) ◽  
pp. 043103-043103-4 ◽  
Author(s):  
Yanqun Dong ◽  
Jae-Ho Song ◽  
Ho-Jong Kim ◽  
Tae-Soo Kim ◽  
Byung-Jun Ahn ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Emission Characteristics ◽  
Light Emitting ◽  
Sapphire Substrates

Graphene-Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non-Polar Sapphire Substrates for Green Light Emitting Diodes

2020 ◽  
Vol 30 (22) ◽  
pp. 2001283
Author(s):  
Fang Liu ◽  
Zhihong Zhang ◽  
Xin Rong ◽  
Ye Yu ◽  
Tao Wang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
Sapphire Substrates

Comparison between Polar (0001) and Semipolar (11\bar22) Nitride Blue–Green Light-Emitting Diodes Grown onc- andm-Plane Sapphire Substrates

2009 ◽  
Vol 48 (3) ◽  
pp. 031002 ◽  
Author(s):  
Philippe De Mierry ◽  
Tobias Guehne ◽  
Maud Nemoz ◽  
Sébastien Chenot ◽  
Emmanuel Beraudo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
Sapphire Substrates

Efficient organic manganese (II) bromide green-light-emitting diodes enabled by manipulating hole and electron transport layer

2021 ◽  
Author(s):  
Hyunsik Im ◽  
Atanu Jana ◽  
Vijaya Gopalan Sree ◽  
QIANKAI BA ◽  
Seong Chan Cho ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Transport Layer ◽  
Lead Free ◽  
Electron Transport Layer ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices

Lead-free, non-toxic transition metal-based phosphorescent organic–inorganic hybrid (OIH) compounds are promising for next-generation flat-panel displays and solid-state light-emitting devices. In the present study, we fabricate highly efficient phosphorescent green-light-emitting diodes...

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

High-Brightness Blue-Green Light-Emitting Diodes on ZnSe Substrates

1995 ◽  
Vol 187 (2) ◽  
pp. 467-470 ◽  
Author(s):  
W. C. Harsch ◽  
G. Cantwell ◽  
J. F. Schetzina
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
High Brightness ◽  
Light Emitting

Blue-Green Light Emitting Diodes with New p-Contact Layers: ZnSe/BeTe

2000 ◽  
Vol 180 (1) ◽  
pp. 217-223 ◽  
Author(s):  
M.W. Cho ◽  
J.H. Chang ◽  
H. Wenisch ◽  
H. Makino ◽  
T. Yao
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting

High‐brightness InGaAlP green light‐emitting diodes

1992 ◽  
Vol 61 (15) ◽  
pp. 1775-1777 ◽  
Author(s):  
H. Sugawara ◽  
K. Itaya ◽  
H. Nozaki ◽  
G. Hatakoshi
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
High Brightness ◽  
Light Emitting
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