scholarly journals Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1−xAlxO2/TiN metal-insulator-metal structures

2011 ◽  
Vol 109 (7) ◽  
pp. 076101 ◽  
Author(s):  
A. Paskaleva ◽  
M. Lemberger ◽  
A. J. Bauer ◽  
L. Frey
2011 ◽  
Vol 1337 ◽  
Author(s):  
Florian Hanzig ◽  
Juliane Seibt ◽  
Hartmut Stoecker ◽  
Barbara Abendroth ◽  
Dirk C. Meyer

ABSTRACTResistance switching in metal – insulator - metal (MIM) structures with transition metal oxides as the insulator material is a promising concept for upcoming non-volatile memories. The electronic properties of transition metal oxides can be tailored in a wide range by doping and external fields. In this study SrTiO3 single crystals are subjected to high temperature vacuum annealing. The vacuum annealing introduces oxygen vacancies, which act as donor centers. MIM stacks are produced by physical vapor deposition of Au and Ti contacts on the front and rear face of the SrTiO3 crystal. The time dependent forming of the MIM stacks under an external voltage is investigated for crystals with varying bulk conductivities. For continued formation, the resistivity increases up to failure of the system where no current can be measured anymore and switching becomes impossible.


Nanoscale ◽  
2018 ◽  
Vol 10 (37) ◽  
pp. 17983-17989 ◽  
Author(s):  
Christian Stelling ◽  
Stefan Fossati ◽  
Jakub Dostalek ◽  
Markus Retsch

Metal–insulator–metal structures prepared by self-assembly exhibit narrow gap plasmon modes, which are fully described by analytical theory.


2020 ◽  
Vol 12 (50) ◽  
pp. 56281-56289
Author(s):  
Ye Yu ◽  
Daniel Schletz ◽  
Johanna Reif ◽  
Felix Winkler ◽  
Matthias Albert ◽  
...  

2005 ◽  
Vol 45 (9-11) ◽  
pp. 1782-1785 ◽  
Author(s):  
M. Exarchos ◽  
V. Theonas ◽  
P. Pons ◽  
G.J. Papaioannou ◽  
S. Melle ◽  
...  

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