scholarly journals Highly sensitive ion detection using Si single-electron transistors

2011 ◽  
Vol 98 (12) ◽  
pp. 123705 ◽  
Author(s):  
Takashi Kudo ◽  
Anri Nakajima
Keyword(s):  
Single Electron ◽  
Ion Detection ◽  
Single Electron Transistors ◽  
Highly Sensitive ◽  
Electron Transistors

A route to fabricate nanocontacts by X-ray lithography for the realization of single electron transistors and highly sensitive biosensors

2006 ◽  
Vol 60 (29-30) ◽  
pp. 3682-3685 ◽  
Author(s):  
Sandro Carrara ◽  
Davide Ricci ◽  
Ermanno di Zitti ◽  
Enzo Di Fabrizio ◽  
Matteo Altissimo ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
X Ray ◽  
Highly Sensitive ◽  
Electron Transistors

scholarly journals High-Temperature Single-Electron Transistors Based on Molecules and Small Nanoparticles.

2021 ◽  
Vol 13 (4) ◽  
pp. 521-528
Author(s):  
Evgeny S. Soldatov ◽  
Keyword(s):  
Operating Temperature ◽  
Single Electron ◽  
Quantum Metrology ◽  
Single Electron Transistors ◽  
Nanoelectronic Devices ◽  
Highly Sensitive ◽  
Research Problems ◽  
Mathematical Sciences ◽  
Electron Transistors ◽  
Technological Methods

The material of the defense of the dissertation for the degree of Doctor of Physical and Mathematical Sciences – the first in Russia doctoral dissertation on molecular singe-electronics is presented. The relevance of the development, creation and research of single-electron transistorswith high charge energy and operating temperature for the creation of fundamentally new nanoelectronic devices applicable in wide practice and ensuring breakthrough research in various fields is noted, the necessity of using quantum dots (molecules/nanoparticles) of atomic-molecular scale for this is shown, the formulation of the research problems is formulated, the physical and technological methods of fabrication and analysis used are listed, the main results of the work are presented and their significance for the development of highly sensitive sensing, quantum informatics and quantum metrology is discussed.

scholarly journals Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps

AIP Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 105005
Author(s):  
Mitsuki Ito ◽  
Mamiko Yagi ◽  
Moe Shimada ◽  
Jun-ichi Shirakashi
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
In Series ◽  
Electron Transistors

scholarly journals Coupled single-electron transistors as a differential voltage amplifier

2006 ◽  
Vol 8 (12) ◽  
pp. 300-300 ◽  
Author(s):  
C S Wu ◽  
C F Lin ◽  
Watson Kuo ◽  
C D Chen
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
Differential Voltage ◽  
Voltage Amplifier ◽  
Electron Transistors

Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2574-2577 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk-Kang Sung ◽  
Jong Duk Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

AIP Advances ◽  
2014 ◽  
Vol 4 (11) ◽  
pp. 117126 ◽  
Author(s):  
L. Arzubiaga ◽  
F. Golmar ◽  
R. Llopis ◽  
F. Casanova ◽  
L. E. Hueso
Keyword(s):  
Electrical Characterization ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Measurements of Kondo and Spin Splitting in Single-Electron Transistors

2004 ◽  
Vol 93 (16) ◽  
Author(s):  
A. Kogan ◽  
S. Amasha ◽  
D. Goldhaber-Gordon ◽  
G. Granger ◽  
M. A. Kastner ◽  
...  
Keyword(s):  
Single Electron ◽  
Spin Splitting ◽  
Single Electron Transistors ◽  
Electron Transistors
Sign in / Sign up

Export Citation Format

Share Document