The material of the defense of the dissertation for the degree of Doctor of Physical and Mathematical Sciences – the first in Russia doctoral dissertation on molecular singe-electronics is presented. The relevance of the development, creation and research of single-electron transistorswith high charge energy and operating temperature for the creation of fundamentally new nanoelectronic devices applicable in wide practice and ensuring breakthrough research in various fields is noted, the necessity of using quantum dots (molecules/nanoparticles) of atomic-molecular scale for this is shown, the formulation of the research problems is formulated, the physical and technological methods of fabrication and analysis used are listed, the main results of the work are presented and their significance for the development of highly sensitive sensing, quantum informatics and quantum metrology is discussed.
Highly sensitive ion detection using Si single-electron transistors
