Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 281-285
Author(s):  
S. Najwa ◽  
A. Shuhaimi ◽  
N. Ameera ◽  
K.M. Hakim ◽  
M. Sobri ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Average Roughness ◽  
Influence Of Substrate

Indium tin oxide was prepared using RF magnetron sputtering at different substrate temperature. The morphological and electrical properties were investigated. Morphological properties were observed by atomic force microscopy. Electrical properties were measured using standard two-point probe measurements. The result shows that the average roughness and peak to valley value are highest at high substrate temperature. The watershed analysis shows that the total grain boundaries are highest at the substrate temperature of 200°C. The lowest resistivity value of 9.57×10-5 Ωcm is obtained from ITO nanocolumn deposited at substrate temperature of 200°C. The improvement of morphological and electrical properties as transparent conducting oxide was observed from ITO nanocolumn deposited at substrate temperature of 200°C.

Effect of Substrate Temperature on Structural and Morphological Properties of Indium Tin Oxide Nanocolumns Using RF Magnetron Sputtering

2014 ◽  
Vol 895 ◽  
pp. 12-16
Author(s):  
S. Najwa ◽  
Ahmad Shuhaimi ◽  
N. Ameera ◽  
K.M. Hakim ◽  
M. Sobri ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Silicon Substrates ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force

Indium tin oxide (ITO) nanocolumns were successfully deposited on both glass and silicon substrates at different substrate temperature from room temperature to 300°C by radio frequency (RF) magnetron sputtering system using an ITO target. The composition of the ITO target was 90% indium oxide and 10% tin oxide. Structures and morphological properties of ITO nanocolumns were investigated. X-ray diffraction (XRD) measurement revealed that the main preferred orientation was changed from (222) to (400) as the substrate temperature increased. The atomic force microscopy (AFM) reveals that the roughness values were increases as the substrate temperature increases. The cross sectional and top view field emission scanning electron microscopy (FESEM) images show that densely packed nanocolumn arrays were obtained from all the samples.

Properties of Indium Tin Oxide Films Prepared by RF Magnetron Sputtering at Different Substrate Temperatures

2012 ◽  
Vol 502 ◽  
pp. 77-81
Author(s):  
Z.Y. Zhong ◽  
J.H. Gu ◽  
X. He ◽  
C.Y. Yang ◽  
J. Hou
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Ito Thin Films

Indium tin oxide (ITO) thin films were deposited by RF magnetron sputtering on glass substrates employing a sintered ceramic target. The influence of substrate temperature on the structural, compositional, optical and electrical properties of the thin films were investigated by X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), spectrophotometer and four-point probes. All the ITO thin films show a polycrystalline indium oxide structure and have a preferred orientation along the (222) direction. The substrate temperature significantly affects the crystal structure and optoelectrical properties of the thin films. With the increment of substrate temperature, the electrical resistivity of the deposited films decreases, the crystallite dimension, optical bandgap and average transmittance in the visible region increase. The ITO thin film deposited at substrate temperature of 200 °C possesses the best synthetic optoelectrical properties, with the highest transmittance, the lowest resistivity and the highest figure of merit.

THE INFLUENCE OF SUBSTRATE TEMPERATURE ON THE ELECTRICAL PROPERTIES OF ZnO FILMS PREPARED BY THE RF MAGNETRON SPUTTERING TECHNIQUE

NANO ◽  
2008 ◽  
Vol 03 (06) ◽  
pp. 469-476 ◽  
Author(s):  
K. SARAVANAKUMAR ◽  
V. SENTHILKUMAR ◽  
C. SANJEEVIRAJA ◽  
M. JAYACHANDRAN ◽  
V. GANESAN ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Carrier Mobility ◽  
Uv Light ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Light Illumination ◽  
Influence Of Substrate ◽  
Substrate Temperatures

ZnO thin films were grown by the RF magnetron sputtering technique at different substrate temperatures, from RT to 300°C. The crystallite size was calculated from XRD and the grain size was measured from AFM for different substrate temperatures. The influence of the substrate temperature on the electrical properties of the films was investigated through the Hall effect, and conductivity studies were performed under UV light illumination. The conductivity and the carrier mobility of the films were found to increase with increasing substrate temperature, which can be due to the grain-boundary-dominated conduction mechanism. The thermal activation energy and photosensitivity of the films were calculated, and the results are presented in this paper.

Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 431-434
Author(s):  
Joon Hong Park ◽  
Sang Chul Lee ◽  
Jin Ho Lee ◽  
Pung Keun Song
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Target Surface ◽  
Flow Ratio ◽  
Dc Power ◽  
Alkali Glass ◽  
Oxygen Ratio ◽  
Ito Films

Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.

Characteristics of Indium Tin Oxide Films Deposited by DC and RF Magnetron Sputtering

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3364-3369 ◽  
Author(s):  
Wenli Deng ◽  
Taizo Ohgi ◽  
Hitoshi Nejo ◽  
Daisuke Fujita
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Tin Oxide Films
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