Optimization of luminescent properties with respect to crystal growth temperatures for SiGe single quantum wells grown by molecular beam epitaxy

1995 ◽  
Vol 77 (4) ◽  
pp. 1753-1757 ◽  
Author(s):  
H. P. Zeindl ◽  
S. Nilsson
Keyword(s):  
Crystal Growth ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Luminescent Properties ◽  
Single Quantum

Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source

2000 ◽  
Vol 76 (26) ◽  
pp. 3929-3931 ◽  
Author(s):  
C. Bradford ◽  
C. B. O’Donnell ◽  
B. Urbaszek ◽  
A. Balocchi ◽  
C. Morhain ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Single Quantum ◽  
Sulphur Source ◽  
Zinc Blende

High quality In0.2Ga0.8As/AlxGa1−xAs (x=0−0.32) strained single quantum wells grown by molecular beam epitaxy

1993 ◽  
Vol 62 (2) ◽  
pp. 190-192 ◽  
Author(s):  
Toshiro Hayakawa ◽  
Hideyoshi Horie ◽  
Masaharu Nagai ◽  
Yoshihisa Niwata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Single Quantum ◽  
High Quality

Fabrication and optical properties of ZnCdSe/ZnSe single quantum wells on GaAs(110) surfaces cleaved in UHV by molecular beam epitaxy

1996 ◽  
Vol 11 (12) ◽  
pp. 1873-1877 ◽  
Author(s):  
Hyun-Chul Ko ◽  
Doo-Cheol Park ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Single Quantum
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