Gas‐phase composition measurements during chlorine assisted chemical vapor deposition of diamond: A molecular beam mass spectrometric study

1996 ◽  
Vol 79 (9) ◽  
pp. 7264-7273 ◽  
Author(s):  
C. A. Rego ◽  
R. S. Tsang ◽  
P. W. May ◽  
M. N. R. Ashfold ◽  
K. N. Rosser
Keyword(s):  
Phase Composition ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Mass Spectrometric Study ◽  
Mass Spectrometric ◽  
Spectrometric Study ◽  
Composition Measurements

Aspects of Gas Phase Chemistry During Chemical Vapor Deposition of Ti-Si-N Thin Films With Ti(NMe2)4 (TDMAT), NH3, and SiH4

1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Similar Process ◽  
Process Conditions ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

AbstractSilane activation, predominantly in the gas phase, has been observed during the chemical vapor deposition of Ti-Si-N thin films using Ti(NMe2)4, tetrakis(dimethylamido)titanium, silane, and ammonia at 450°C, using molecular beam mass spectrometry. The extent of silane reactivity was dependent upon the relative amounts of Ti(NMe2)4and NH3. Additionally, each TDMAT molecule activates multiple silane molecules. Ti-Si-N thin films were deposited using similar process conditions as the molecular beam experiments, and RBS and XPS were used to determine their atomic composition. The variations of the Ti:Si ratio in the films as a function of Ti(NMe2)4 and NH3 flows were consistent with the changes in silane reactivity under similar conditions.

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