scholarly journals Large area quasi-free standing monolayer graphene on 3C-SiC(111)

2011 ◽  
Vol 99 (8) ◽  
pp. 081904 ◽  
Author(s):  
C. Coletti ◽  
K. V. Emtsev ◽  
A. A. Zakharov ◽  
T. Ouisse ◽  
D. Chaussende ◽  
...  
Keyword(s):  
Monolayer Graphene ◽  
Large Area ◽  
Free Standing

Frank-van der Merwe Growth in Bilayer Graphene

2020 ◽  
Author(s):  
Haozhe Wang ◽  
Zhenpeng Yao ◽  
Wei Sun Leong ◽  
Gang Seob Jung ◽  
Qichen Song ◽  
...  
Keyword(s):  
Bilayer Graphene ◽  
Growth Mode ◽  
Monolayer Graphene ◽  
Layer By Layer ◽  
Large Area ◽  
Island Growth ◽  
Free Standing ◽  
Adhesive Energy ◽  
Twisting Angle

<p>Bilayer graphene has attracted interest for its unique properties, including interesting electrical behavior when one layer is slightly rotated relative to the other. However, the quality of large-area bilayer graphene is often limited by the layer-plus-island growth mode in which islands of thicker graphene present as unavoidable impurities. Here, we report the observation of the layer-by-layer, Frank-van der Merwe (FM) growth mode in bilayer graphene where multilayer impurities are suppressed. Instead of the conventional surface adhesive energy, it is found that interface adhesive energy is possible to be tuned with an oxidative pretreatment. The FM-grown bilayer graphene is of AB-stacking or with small-twisting-angle (θ = 0-5°), which is more mechanically robust compared to monolayer graphene, facilitating a free-standing wet transfer technology.</p>

Large Area Quasi-Free Standing Monolayer Graphene on 3C-SiC(111)

2012 ◽  
Vol 717-720 ◽  
pp. 617-620 ◽  
Author(s):  
Ulrich Starke ◽  
Camilla Coletti ◽  
Konstantin Emtsev ◽  
Alexei A. Zakharov ◽  
Thierry Ouisse ◽  
...  
Keyword(s):  
Graphene Layer ◽  
Large Scale ◽  
Bulk Crystal ◽  
Monolayer Graphene ◽  
Graphene Monolayer ◽  
Large Area ◽  
Free Standing ◽  
Hydrogen Intercalation

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on a (111) oriented cubic SiC bulk crystal. The free standing monolayer was prepared on the 3C-SiC(111) surface by hydrogen intercalation of a -reconstructed carbon monolayer, so-called zerolayer graphene, which had been grown in Ar atmosphere. The regular morphology of the surface, the complete chemical and structural decoupling of the graphene layer from the SiC substrate as well as the development of sharp monolayer p-bands are demonstrated. On the resulting sample, homogeneous graphene monolayer domains extend over areas of hundreds of square-micrometers.

Frank-van der Merwe Growth in Bilayer Graphene

2020 ◽  
Author(s):  
Haozhe Wang ◽  
Zhenpeng Yao ◽  
Wei Sun Leong ◽  
Gang Seob Jung ◽  
Qichen Song ◽  
...  
Keyword(s):  
Bilayer Graphene ◽  
Growth Mode ◽  
Monolayer Graphene ◽  
Layer By Layer ◽  
Large Area ◽  
Island Growth ◽  
Free Standing ◽  
Adhesive Energy ◽  
Twisting Angle

<p>Bilayer graphene has attracted interest for its unique properties, including interesting electrical behavior when one layer is slightly rotated relative to the other. However, the quality of large-area bilayer graphene is often limited by the layer-plus-island growth mode in which islands of thicker graphene present as unavoidable impurities. Here, we report the observation of the layer-by-layer, Frank-van der Merwe (FM) growth mode in bilayer graphene where multilayer impurities are suppressed. Instead of the conventional surface adhesive energy, it is found that interface adhesive energy is possible to be tuned with an oxidative pretreatment. The FM-grown bilayer graphene is of AB-stacking or with small-twisting-angle (θ = 0-5°), which is more mechanically robust compared to monolayer graphene, facilitating a free-standing wet transfer technology.</p>

Nanographene growing on free-standing monolayer graphene

Carbon ◽  
2019 ◽  
Vol 143 ◽  
pp. 669-677 ◽  
Author(s):  
Yosuke Maehara ◽  
Kenji Yamazaki ◽  
Kazutoshi Gohara
Keyword(s):  
Monolayer Graphene ◽  
Free Standing

Charge neutrality of quasi-free-standing monolayer graphene induced by the intercalated Sn layer

2016 ◽  
Vol 49 (13) ◽  
pp. 135307 ◽  
Author(s):  
Hidong Kim ◽  
Otgonbayar Dugerjav ◽  
Altaibaatar Lkhagvasuren ◽  
Jae M Seo
Keyword(s):  
Monolayer Graphene ◽  
Free Standing ◽  
Charge Neutrality

Quasi-free-standing Monolayer Graphene Formed by Ag Intercalation on a SiC(0001) Surface

2014 ◽  
Vol 64 (11) ◽  
pp. 1059-1063
Author(s):  
Altaibaatar LKHAVASUREN ◽  
Hidong KIM ◽  
Jae M. SEO*
Keyword(s):  
Monolayer Graphene ◽  
Free Standing

Monolayer graphene-supported free-standing PS-b-PMMA thin film with perpendicularly orientated microdomains

RSC Advances ◽  
2014 ◽  
Vol 4 (109) ◽  
pp. 63941-63945 ◽  
Author(s):  
Mei-Ling Wu ◽  
Jing Li ◽  
Li-Jun Wan ◽  
Dong Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monolayer Graphene ◽  
Free Standing

A facile way to fabricate robust free-standing PS-b-PMMA thin films with perpendicularly orientated microdomains on monolayer graphene is reported.

Multilayer Graphene-Based Carbon Interconnect

2012 ◽  
Vol 1407 ◽  
Author(s):  
Tianhua Yu ◽  
Edwin Kim ◽  
Nikhil Jain ◽  
Bin Yu
Keyword(s):  
Performance Metrics ◽  
Monolayer Graphene ◽  
Multilayer Graphene ◽  
Large Area ◽  
Electrical Stress ◽  
Oxygen Plasma Etching ◽  
Doping Technique ◽  
System Breakdown ◽  
Grown Graphene ◽  
On Chip

ABSTRACT3D stacked (or uncorrelated) multilayer graphene (s-MLG) is investigated as a potential material platform for carbon-based on-chip interconnects. S-MLG samples are prepared by repeatedly transferring and stacking the large-area CVD-grown graphene monolayers, followed by wire patterning and oxygen plasma etching of graphene. We observed superior wire conduction of s-MLG over that of monolayer graphene or ABAB-stacked multilayer graphene. Further reduction of s-MLG resistivity is anticipated with increasing number of stacked layers. Electrical stress-induced doping technique is used to engineer the Dirac point, as well as to reduce graphene-to-metal contact resistance, improving the overall performance metrics of the s-MLG system. Breakdown experiments show that the current-carrying capacity of s-MLG is significantly enhanced as compared with that of monolayer graphene.

Sign in / Sign up

Export Citation Format

Share Document